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Technical Insights

Thursday 31st August 2017
If demand for GaAs, InP and germanium substrates grows, it can be fulfilled, thanks to sufficient availability of gallium, germanium, and indium
Tuesday 22nd August 2017
InAs quantum dots lasers are ideal for silicon photonics: they draw very little power, take up very little space, and can operate over a wide temperature range
Monday 21st August 2017
Cloud data centres: 10 times to 100 times larger than the opportunity with service providersIntegrated optical components for long haul, metro and cloud data centres are benefiting from excellence in analogue and photonics technology
Monday 31st July 2017
A stack of alternating layers of GaN and AlN creates an avalanche photodiode with high sensitivity and excellent controllability
Monday 31st July 2017
Displays based on microLEDs combine exceptional contrast with a vast colour gamut, tremendous brightness and a great deal of ruggedness, but will production be held back by their complexity?
Monday 31st July 2017
Why is the power conversion efficiency of the leading GaN lasers just half of that of the best LEDs?
Monday 10th July 2017
Relaxed InGaN substrates open the door to high quality lighting and full colour displays based on III-nitride LEDs
Monday 26th June 2017
Traditionally, one of the benefits of trimming the size of the silicon transistor has been a cut in the power it consumes. But that’s no longer the case, and due to this, there is a great deal of concern over how to handle the power consumed by the transistor, and also the interconnects.
Monday 19th June 2017
With GaN HEMTs, is the additional cost of a native substrate a price worth paying?
Monday 19th June 2017
As history tells us, before a solution can be found, a problem must first arise that needs to be solved. The history of Siconnex began when a power device manufacturer was faced with this challenge and since then many new applications and solutions have been enabled throughout the semiconductor industry, including power, LED, analog/mixed signal, MEMS, and many more.
Thursday 15th June 2017
Price erosion and a slowing of smartphone growth will lead to a very modest increase in the GaAs market, argues Eric Higham from Strategy Analytics in an interview with Richard Stevenson
Thursday 15th June 2017
As the demand for MEMS, sensors and mobility expands, heterogeneous devices on 200 mm substrates will become more common to address that increased demand.
Tuesday 13th June 2017
Acquisitions and investment enhance SolAero’s capabilities in solar power technologies for satellites.
Monday 12th June 2017
Topping this year’s shareprice leaderboard are the suppliers of epiwafers, substrates and MOCVD tools
Tuesday 23rd May 2017
Turning to CVD for the growth of cubic SiC on silicon slashes material costs and delivers a hike in the scale of production
Monday 22nd May 2017
Careful control of epitaxy, in part through facet engineering, can create a semi-polar GaN template on sapphire that is ideal for the mass-production of ultra-efficient LEDs
Wednesday 17th May 2017
Simple approach highlights the benefits of nitridation
Wednesday 10th May 2017
Advancing precision laser optics with substrate-transferred epitaxial films
Wednesday 10th May 2017
ENTRY: Hybrid InGaAs/SiGe CMOS Circuits
Tuesday 9th May 2017
Selective epitaxy can scale field-effect transistors featuring InGaAs and SiGe channels to small enough dimensions for next-generation CMOS
Wednesday 3rd May 2017
ENTRY: PlasmaPro100 Polaris Etch System
Thursday 27th April 2017
A true appreciation of the performance of a UVC LED requires an understanding of its temperature dependent output power and its spectral profile
Wednesday 26th April 2017
ENTRY: Element Six TM200
Monday 24th April 2017
ENTRY: RF Fusion Portfolio

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