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Technical Insights


Tuesday 9th January 2018
Superluminescent LEDs with record-breaking output powers and efficiencies underscore the promise of these devices for head-up displays and pico-projectors by Marco Malinverni from Exalos
Monday 8th January 2018
Researchers at IEDM offers insights into how to make GaN transistors switch faster, produce higher blocking voltages, exhibit a very low on-resistance and completely suppress dynamic on-resistance by Richard Stevenson
Thursday 4th January 2018
Can GaN-on-silicon move on from just serving 600 V and below power management systems, wireless charging and LIDAR, to win deployment in next-generation RF applications, such as 5G and the Internet of Things? By Markus Behet and Joff Derluyn from EpiGaN
Tuesday 2nd January 2018
Will Newport Wafer Fab become the world's first silicon and compound semiconductor foundry? Richard Stevenson reports
Thursday 28th December 2017
Saturation of the radiative recombination rate is the primary cause of droop, according to differential carrier lifetime measurements by Dong-Soo Shin and Jong-In Shim from Hanyang University
Tuesday 26th December 2017
Ventilation systems can consume less power when they incorporate gas sensors with infra-red LEDs delivering ground-breaking performance by Koichiro Ueno, Hiromi Fujita, Osamu Morohara, Edson Camargo, Hirotaka Geka, Yoshihiko Shibata and Naohiro Kuze from Asahi Kasei Microdevices Corporation
Monday 25th December 2017
Photoenhanced wet etching of InGaN leads to lift-off of high-quality heterostructures by Chris Youtsey and Robert McCarthy from Microlink Devices and Andy Xie from Qorvo
Wednesday 20th December 2017
When customers come knocking at your door, wanting massive quantities of your products in just six months, can you quickly react, change, and deliver by the deadline? By Mario Faria, Ilia Kaplan, and Ariel Meyuhas from the Max Group
Monday 18th December 2017
A six-inch single-wafer tool with high rotation speeds yields uniform, high-quality SiC epilayers by Yoshiaki Daigo, Hideki Ito and Shinichi Mitani from Nuflare Technology
Tuesday 12th December 2017
GaAs can meet all the requirements for the power amplifiers used in front-end 5G modules by Ben Thomas from Qorvo
Monday 11th December 2017
Sol Voltaics aerosol growth process promises to kick-start a market for terrestrial solar cells based on GaAs
Monday 27th November 2017
A gallium evaporator made from a porosity-controlled ceramic holds the key to very high GaN growth rates
Monday 20th November 2017
Latticed-matched superlattices of InGaAsP and InGaP promise to take multi-junction solar cell efficiency to a new high
Monday 13th November 2017
Electrically driven diffusion is an issue for MOCVD-grown lasers, but not for their MBE-grown cousins
Tuesday 31st October 2017
Can quantum dots flourish in telecom lasers, LIDAR and quantum communication? By Dieter Bimberg from Institute For Solid State Physics, Technical University Berlin
Monday 30th October 2017
Optimised trences and tins enable the production of vertical, normally-off GaN power transistors with low epitaxial costs and high blocking voltages
Tuesday 24th October 2017
Uniting III-Vs with silicon CMOS enables the fabrication of ground-breaking, low-cost lasers for access/metropolitan networks and datacentres by David Carrara and Guang-Hua Duan from III-V Lab and Segolene Oliver from CEA LETI
Monday 23rd October 2017
UVC LED technology will revolutionise how we disinfect our homes, hospitals and workplaces. But before this can happen, engineers need a better way to remove heat from their designs by John Cafferkey from Cambridge Nanotherm
Wednesday 18th October 2017
Reducing thermal lensing boosts brightness of broad-area laser bars by Christian Lauer from Osram OPTO Semiconductors
Monday 16th October 2017
Presentations at the twelfth International Conference on Nitride Semiconductors offered an insight into strategies for improving the performance of UV LEDs, lasers and various forms of transistor by Jean-Yves Duboz from CRHEA-CNRS
Thursday 28th September 2017
An efficient cooling architecture holds the key to trimming the size, weight and power of diode-pumped laser systems
Wednesday 27th September 2017
Simplifying a desinger's life with a process design kit for GaN-based integrated circuits
Tuesday 12th September 2017
Combining trench isolation with silicon-on-insulator technology enables monolithic integration of fully isolated power devices
Wednesday 6th September 2017
Do you dread trying to explain what we do as an industry? If so, try re-counting Bob Johnstone’s new book on the LED lighting revolution

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