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Technical Insights


Monday 12th December 2016
Automotive and datacentre applications helping to drive CAGR of 21.3 percent
Monday 28th November 2016
Switching the substrate from silicon to SOI increases the RF performance of the GaN HEMT, thanks to a foundation with lower loss and better isolation
Monday 21st November 2016
Ammonia-free atomic layer deposition can yield tremendously smooth layers of GaN with incredibly high levels of uniformity.
Monday 21st November 2016
Mesa isolation deep into the native substrate propels the breakdown voltage of the GaN HEMT to 5kV, while increasing its effective critical lateral field to 1 MV/cm
Tuesday 8th November 2016
BY BING WANG, LI ZHANG, KENNETH ENG KIAN LEE, FAYYAZ MOIZ SINGAPOREWALA, EUGENE A. FITZGERALD AND JURGEN MICHEL FROM SINGAPORE-MIT ALLIANCE FOR RESEARCH AND TECHNOLOGY
Monday 24th October 2016
An inverted metamorphic architecture offers a route to making lightweight, incredibly efficient, cost-competitive cells for space.
Tuesday 11th October 2016
Regardless of its form, the silicon transistor is tipped to offer diminishing returns at the 7 nm CMOS node and beyond. Can the InGaAs finFET step in and maintain the march of Moore’s Law?
Tuesday 11th October 2016
Digital GaN-based power amplifiers can deliver a revolution in wireless communication infrastructure
Tuesday 11th October 2016
BY CARLO DE SANTI, MATTEO MENEGHINI, GAUDENZIO MENEGHESSO AND ENRICO ZANONI FROM THE UNIVERSITY OF PADOVA
Friday 30th September 2016
The freestanding GaN HEMT holds the key to an affordable, highly sensitive nitrogen dioxide sensor operating at ultra-low powers
Tuesday 27th September 2016
The output power of the GaN VCSEL hits a new high with the introduction of epitaxial lateral overgrowth
Wednesday 14th September 2016
US Department of Energy solar initiative to fund CdTe research
Monday 12th September 2016
Products made from GaAs and LDMOS will be superseded by GaN variants that will penetrate new markets such as heating systems for microwave ovens, power sources for plasma lighting and automotive ignition
Monday 12th September 2016
Phosphors contribute to droop, but their energy-sapping impact can be minimised through LED design, or by casting them in a ceramic form.
Tuesday 23rd August 2016
GaN-based LEDs are more efficient and cost-effective when they contain an array of embedded hollow cavities in the sapphire substrate
Tuesday 23rd August 2016
Production of affordable, high-quality GaN substrates could result from HVPE of GaN on a native surface
Tuesday 23rd August 2016
Increasing the indium content in the InGaAs channel boosts the drive current of a tunnel FET while maintaining its great switching behaviour
Monday 15th August 2016
Growing gallium oxide on sapphire can fulfil the promise of cheap, efficient, high-voltage power devices
Monday 15th August 2016
GaN HEMTs are ideal for making high-power amplifiers for satellite communication, because they are lightweight, compact, efficient and capable of delivering a high output power and uniform gain over a broad bandwidth
Tuesday 9th August 2016
Earlier this year Veeco launched the K475i, a flagship tool for arsenide and phosphide growth. Company Vice President of Marketing for MOCVD, Sudhakar Raman, explains the rationale behind the release of this system, and why it can trim device manufacturing costs by up to 20 percent.
Tuesday 9th August 2016
To increase yield and throughput in high-volume GaAs fabs, engineers should obtain more data from suppliers, introduce better approaches to analysing process data, and understand how different statistical methods handle outliers.
Monday 4th July 2016
Single-wafer MOCVD tools producing rapid changes in temperature are ideal for delivering high throughput while ensuring excellent levels of film uniformity
Monday 4th July 2016
Optimised growth enables the first optically pumped, low-threshold deep UV lasers on sapphire

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