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Technical Insights


Wednesday 12th April 2017
Distributor Mouser Electronics accused of infringing high power LED technology patent
Friday 3rd March 2017
For phosphor-pumped white-light sources, switching from LEDs to lasers increases efficiency, lengthens lifetime and yields highly collimated beamsBY FAIZ RAHMAN FROM OHIO UNIVERSITY
Thursday 2nd March 2017
LEDs are ideal for horticultural lighting, combining high efficiency with the opportunity to target a spectral range. Sanan has a 30 percent share of the Chinese market for horticultural lighting. Chipmakers are chasing better margins via greater economies of scale, carefully targeted product portfolios and superior device performance
Thursday 2nd March 2017
Diminishing droop and enhancing extraction efficiency help to build better, brighter LEDsBY ASHISH TANDON, TONI LOPEZ, OLEG SHCHEKIN, ISAAC WILDESON, PARIJAT DEB, HENRY CHOY AND JY BHARDWAJ FROM LUMILEDS
Wednesday 1st March 2017
Merits of the high-voltage SiC MOSFET include low switching losses and a high operating temperature. But is this transistor sufficiently rugged and reliable for widespread deployment?BY MUNAF RAHIMO FROM ABB SWITZERLAND LTD SEMICONDUCTORS
Wednesday 1st March 2017
Leaving California for Cardiff is a price worth paying for taking the top job at the Institute for Compound SemiconductorsBY RICHARD STEVENSON
Wednesday 1st March 2017
Compositional fluctuations in InGaN alloys are partly to blame for the dramatic drop in efficienty when moving from blue to green LEDsBY MATTHIAS AUF DER MAUR FROM THE UNIVERSITY OF ROME ‘TOR VERGATA’ AND SERGEY YU KARPOV FROM STR GROUP
Wednesday 22nd February 2017
A record-breaking bandwidth makes the violet semi-polar laser well suited for visible light communication 
Wednesday 22nd February 2017
Very high data rates and tremendous temperature stability make the InP quantum dot laser a very promising contender for tomorrow's optical networks
Wednesday 22nd February 2017
Giving GaN freedom from Nb.N
Wednesday 22nd February 2017
Template-assisted selective epitaxy enables the construction of ultra-low power III-V TFETs on silicon substrates
Monday 20th February 2017
Power densities produced by GaN HEMTs can reach their full potential by integrating these devices with diamond and microfluidic cooling
Monday 20th February 2017
III-V devices deliver record on-currents, unprecedented gain at terahertz frequencies and far lower power-switching losses
Friday 27th January 2017
Company adds enterprise and cloud datacentre expertise to portfolio
Thursday 26th January 2017
Centre in  Blacksburg, Virginia adds to applications research and support for EPC customer evaluation
Tuesday 24th January 2017
Luxeon MX LED delivers 1,200 lumens at 150lm/W for outdoor lighting fixtures
Monday 23rd January 2017
CEO Martin Goetzeler is to leave Aixtron in agreement with the company's Supervisory Board
Thursday 12th January 2017
650V Schottky barrier diodes have 70 percent better surge forward current
Wednesday 11th January 2017
Carbonics launches carbon-on-silicon technology for RF applications
Thursday 22nd December 2016
Ultra-high resolution flexible displays will benefit from microLEDs that efficiently emit all three primary colours
Thursday 22nd December 2016
Eradicating epi-layer growth pits in GaN-on-GaN diodes boosts yield by reducing failures associated with low breakdown voltages
Monday 19th December 2016
Multi-year agreement declares Veeco sole provider to Osram of MOCVD and PSP  technology
Friday 16th December 2016
US report urges Department of Energy to think of ways to continue to improve LED efficiency
Monday 12th December 2016
Private equity company Apollo Global Management to buy LED company for around $1.5 billion cash

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