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Technical Insights


Wednesday 6th February 2002
Integrating resonators into LEDs has opened up some new market opportunities for LED manufacturers write Ralph Wirth and co-workers.
Wednesday 6th February 2002
In MOCVD-grown long-wavelength lasers, the abruptness of the interfaces in the MQW region has a strong influence on performance, according to Sherman Li and colleagues from Emcore.
Wednesday 6th February 2002
Speakers at ICSCRM 2001 revealed that some important milestones have been passed in the quest to develop SiC into a commercially viable electronic material, writes Mark Johnson.
Saturday 1st December 2001
The inventory problem seems to have been solved, but will new technologies and applications provide the key to resuming growth in 2002? Marie Meyer reports.
Saturday 1st December 2001
Automation, outsourcing and integration are all key areas for fiber-optic component manufacturers as they struggle to cope with the current market slump, writes Tim Whitaker.
Saturday 1st December 2001
After four years of "hypergrowth", the optical components industry is now in the middle of a major slump. Component price declines coupled with flat-to-declining volumes are likely to result in negative growth in revenues in 2002. As RHK's John Lively explains, a period of restructuring and consolidation will demand a leaner, more manufacturing-savvy approach to component production.
Saturday 1st December 2001
Compound semiconductor devices are a key technology for the continued development of optical communications. Jessica Maclean reports from ECOC on the latest advances that are helping to make optical networks faster and more flexible.
Saturday 1st December 2001
Though dominated by silicon microelectronics, there was plenty to report on state-of-the-art III-nitrides and other compound semiconductor devices at this year's IEDM, writes Jon Newey.
Saturday 1st December 2001
Optoelectronic component manufacturers are currently experiencing considerable downward cost pressure. Bruce Hueners of Palomar Technologies looks at how the component makers are moving towards improved high-accuracy, high-yield automated methods of testing, assembly and packaging.
Saturday 1st December 2001
The industry's battle for ever-purer gases in semiconductor manufacturing is being fought on many fronts, including their point of use. Jon Newey takes an in-depth look at all the options that are available in the MOCVD process to ensure purer gases during semiconductor growth.
Thursday 1st November 2001
Despite the difficult market conditions, component vendors had plenty to talk about at the European Conference on Optical Communication (ECOC), writes Tim Whitaker.
Thursday 1st November 2001
A mixture of technical papers and discussion sessions covered an impressive variety of topics at GAAS2001. Tim Whitaker and Jon Newey report on the highlights.
Thursday 1st November 2001
MCT-based infrared systems dominate the high-performance thermal camera and sensor market. Jon Newey investigates current developments in material design, growth and manufacture.
Thursday 1st November 2001
A number of challenges need to be overcome before AlInGaN-based LED production becomes a truly high-volume, low-cost process, write Heng Liu and colleagues from AXT's LED Division.
Thursday 1st November 2001
Substrates for gallium nitride growth are generally small, expensive and difficult to work with, but GaN-on-silicon offers a viable alternative, according to Warren Weeks and Ricardo Borges.
Thursday 1st November 2001
The ability of GaN to withstand high power densities has made it a hot research topic. Lester Eastman provides an insight into what we can expect from GaN-based devices.
Thursday 1st November 2001
A small Oregon company has developed the technology to form contacts to SiC that are chemically and electrically stable up to temperatures exceeding 1000 °C, writes Donald Hagge.
Monday 1st October 2001
Monday 1st October 2001
Raf Vandersmissen discusses the merits of different HEMT technologies for millimeter-wave devices and outlines IMEC's integration schemes for GaAs and Ge metamorphic HEMTs.

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