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Technical Insights


 
Tuesday 9th July 2002
Business conditions might have been difficult lately, but as Jon Newey discovered at GaAs Mantech, the GaAs industry is busy developing new technologies and business plans to address the market as growth returns.
Tuesday 9th July 2002
Low-resistance metal interconnects and spin-on low-k dielectric materials such as BCB have been widely used in GaAs IC manufacturing, writes Philip Garrou of Dow Chemical.
Tuesday 9th July 2002
As the market continues to demand lower cost optical communications, component makers are turning to integration. Streamlined bonding and alignment will bridge the gap between discrete and integrated components write Robert Green and Stuart Morgan of Bookham Technology.
Tuesday 9th July 2002
The European Union has allocated a multimillion-dollar budget to help researchers develop wide-bandgap semiconductors that can meet the needs of tomorrow's electronic and optoelectronic devices. Rebecca Pool talks to some of the researchers that are tackling these issues.
Tuesday 9th July 2002
The lack of a native substrate has led to a variety of choices for those developing GaN-based devices. Jon Newey looks at what is currently in use and what the future developments might be in this fast-moving area.
Tuesday 9th July 2002
A consortium of companies and universities in Japan is developing efficient white LEDs and fixtures for solid-state lighting applications. Richard Dixon reports on the Light for the 21st Century project, a national program, with the overall aim of reducing energy consumption and contributing to Japan's 1997 commitment to lower greenhouse gas emissions.
Tuesday 9th July 2002
The National Compound Semiconductor Roadmap is an online resource from the Office of Naval Research that aims to accelerate compound semiconductor research, reports Richard Dixon.
Wednesday 5th June 2002
LDMOS transistors with a power density of more than 2 W/mm at 1 GHz and 70 V will compete very effectively with more expensive GaN-on-SiC devices for base-station power amplifiers.
Wednesday 5th June 2002
As a result of a strategic partnership between Raytheon RF Components and WIN Semiconductors Corp, the two companies are now able to manufacture drop-in replacement GaAs HBT MMICs for handset power amplifier modules. According to Dennis Williams and colleagues, the chips are equivalent to established Raytheon products in terms of dimensions, topography and performance, rendering the once-sacred microwave MMIC just another line item on the assembly bill of materials.
Wednesday 5th June 2002
Reflectance anisotropy spectroscopy has helped to improve the productivity of GaAs epitaxy. Elisabeth Steimetz and colleagues describe how it is now being applied to InP-based structures.
Wednesday 5th June 2002
Peter Velling and colleagues from IPAG describe how a quantitative X-ray analysis technique is being used in the fab to provide SPC for epilayers.
Wednesday 5th June 2002
Spectroscopic ellipsometers have become an integral part of many thin-film manufacturing processes, and can measure the properties of semiconductor epilayers with great accuracy, write Lianchao Sun, Jean-Claude Fouéré and Chris Pickering.
Friday 3rd May 2002
Backed by growing market interest and the availability of 4 inch substrates and epiwafers, several IC manufacturers are now developing products for 40 Gbit/s networks, writes Tim Whitaker.
Friday 3rd May 2002
Companies aiming to transfer indium phosphide technology from the lab to the fab can learn a great deal from the experiences of the GaAs industry, writes Velocium's Dwight Streit.
Friday 3rd May 2002
As demand increases for high-speed indium phosphide ICs in fiber-optic networks, wafer manufacturers must strive to keep pace. Rebecca Pool discovers some of the issues involved in supplying high-quality InP substrates grown using different techniques.
Friday 3rd May 2002
With it becoming increasingly difficult and expensive to reduce the limits of lithography any further, researchers are now looking at new ways to shrink feature sizes.
Friday 3rd May 2002
Despite a lack of customers, there is a lot of activity at the component level of the fiber-optic market. Tim Whitaker and Richard Dixon report from the recent OFC conference in Anaheim, CA.
Friday 3rd May 2002
High-brightness LEDs continue to penetrate automotive, displays, signage and decorative lighting markets, says Richard Dixon in the second of two reports from the recent Strategies in Light conference.
Friday 3rd May 2002
Scott Jennato, Joe Jablonski and Don Feuerstein look at a new approach to VCSEL testing that promises to increase wafer yields, cut manufacturing costs and reduce time to market.
Wednesday 3rd April 2002
TriQuint has virtually completed the conversion of its fab in Oregon to 6 inch wafers, and also has a 6 inch wafer fab in Texas standing ready for the market upswing, writes Tim Whitaker.
Wednesday 3rd April 2002
The wireless handset industry is poised to recover from its slump in 2001 as subscribers buy replacement handsets with new features and services, writes Tim Whitaker.

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