Nexperia qualifies 650V SiC diodes for automotive
Nexperia has announced that its 650V, 10A SiC Schottky diode is now automotive qualified (PSC1065H-Q) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for various applications in electric vehicles and other automobiles.
Additionally, in a further extension to its portfolio of SiC diodes, Nexperia is now offering industrial-grade devices with current ratings of 6 A, 16A, and 20 A in TO-220-2, TO-247-2, and D2PAK-2 packaging to facilitate greater design flexibility.
The merged PiN Schottky (MPS) structure of these devices is said to provide additional advantages over similar competing SiC diodes, including outstanding robustness against surge currents. This eliminates the need for additional protection circuitry, thereby significantly reducing system complexity and enabling hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications.
Nexperia also says its ‘thin SiC’ technology delivers a thinner substrate (one-third of its original thickness) which reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop.
“We’ve seen an excellent market response to the initial release of our SiC diodes. They have proven themselves in design-ins with one notable example in power supplies for industrial applications, where customers have achieved especially good results. The superior reverse recovery of these diodes translates to high efficiency in real-world use”, says Katrin Feurle, senior director and head of SiC Diodes & FETs product group at Nexperia. “We are particularly excited that this is our first automotive-qualified product, and it is already recognised by major automotive players for its performance and reliability.”
