CGD's 650V ICeGaN devices improve EV range
Cambridge GaN Devices (CGD), has developed a 650V ICeGaN IC for automotive applications enabling smaller, lighter inverters and extended EV range.
Using GaN ICs in parallel for powertrain designs can be a significant challenge for developers. The ICeGaN interface, however, balances the operation of multiple devices without the need to select devices with similar performance characteristics or the need to incorporate balancing components and additional design complexity.
With a low on-resistance of only 9mΩ, the new ICeGaN device is designed to lower losses throughout the EV powertrain and ease thermal management. A further benefit is higher frequency switching to aid downsizing and weight reduction, boosting the range of the vehicle.
The ICeGaN simplifies the interface with the gate driver ICs in the inverter and allows simple parallel operation with the larger die. The auxiliary transistor in the interface filters out parasitic noise from the gate driver loops, giving the device a built-in immunity to noise. The interface also includes integrated temperature sensing for system control and improved diagnostics that improve the reliability of the EV powertrain.
Daniel Murphy, senior director of product management at CGD commented: “This technology demonstrates the advantages of GaN and the ICeGaN interface for inverter designs with the lower losses, smaller size and lower costs that automotive developers are asking for.”
CGD has already demonstrated a multi-level GaN 800Vdc inverter that can power electric motors to over 100 kW peak, 75 kW continuous power, benefiting a broad range of high-voltage electrification and motor-drive applications.
CGD recently announced that it is working with GlobalFoundries (GF) to make these and other devices, expanding its supply chain capabilities for ICeGaN and other power devices.
A 9mΩ prototype IC is sampling now and CGD is working with several automotive OEMS and Tier One suppliers on ICeGaN devices for EV powertrain designs.
