Guerrilla RF expands GaN design support
Guerrilla RF, a US provider of RF and microwave semiconductors, has announced that new nonlinear simulation models for its GRF0005 and GRF0012 GaN power transistors are now available in the Modelithics COMPLETE Library.
The company also announced that it is sampling three new high-power GaN- on-SiC devices targeting both commercial and aerospace & defence markets. The broadband nature of these devices makes them suitable for tactical tadio, UAS (Drone), and C-UAS (counter drone) applications.
Modelithics provides measurement-based RF and microwave simulation models that engineers use in EDA software to assess component performance before building hardware. The new GRF0005 and GRF0012 models extend design support across Guerrilla RF’s GaN portfolio from 5 W to 150 W.
“Making these models available through the Modelithics COMPLETE Library is an important step in expanding Guerrilla RF’s GaN platform,” said Ryan Pratt, founder and CEO of Guerrilla RF.
“It gives customers a more practical way to evaluate performance early in the design process and move toward production with greater confidence. Our growing portfolio of GaN models continues to build on our RF design expertise and expands our ability to serve higher-power applications across military systems and wireless infrastructure, which are among the company’s fastest-growing segments. As these programs advance, we expect revenue derived from our GaN portfolio to ramp through 2027 and beyond, positioning the platform to become a meaningful growth driver for Guerrilla RF.”
The GRF0005 and GRF0012 are 5 W and 12 W devices, respectively, with both operating from DC to 12 GHz. These transistor cores natively support 40 V operation and are also compatible with 28 V supply rails. Together with the six GaN models announced earlier this year, the two new models broaden customer access to simulation tools that support design-in activity, shorten development cycles and advance adoption of Guerrilla RF’s high- power GaN portfolio.
Guerrilla RF is now sampling three additional discrete GaN-on-SiC high-electron-mobility transistors (HEMTs) for both commercial and Aerospace & Defense applications. these are the GRF0051: 50 W P3dB, DC to 6 GHz, supporting 28 V and 50 V operation; the GRF0110: 110 W P3dB, DC to 3.7 GHz, supporting 28 V and 50 V operation; and the GRF0150: 150 W P3dB, DC to 3.2 GHz, supporting 28 V and 50 V operation.
The devices are expected to move into full production in the near term.
