SUNY seed funding for novel Ga₂O₃ vertical MOSFET
State University of New York (SUNY) has announced seed funding through the SUNY Technology Accelerator Fund (TAF) for a vertical trench Ga₂O₃ MOSFET using a unique in-situ Mg-doped current blocking layer to enable high-voltage operation with enhanced efficiency and robustness in power electronic devices.
The technology, developed by the University at Buffalo and Ohio State University, addresses the need for high-voltage power devices suitable for grid and traction applications, overcoming the limitations of traditional silicon-based devices.
The design is said to overcomes challenges in the development of vertical power devices, particularly the lack of shallow acceptors in Ga₂O₃. It enables higher voltage operation with increased efficiency, robustness, and thermal performance, making it suitable for high-power applications.
Potential pplications include high voltage DC converters for grid applications; traction power electronics for electric locomotives, high-voltage instruments and devices; fast-charging stations for electric vehicles.
