Ligentec announces new integrated III-V photodetector platform
At the European Conference on Optical Communication (ECOC) this week, Swiss company Ligentec, is announcing a new generation of heterogeneous integrated Thin-Film Lithium Niobate (TFLN) and integrated III-V photodetectors (PD) directly onto its proven low-loss SiN platform.
Ligentec says the approach creates an ideal platform for coherent communication, OCS, optical computing, and advanced Quantum Key Distribution (QKD) systems.
Features include an ultra-wide modulation bandwidth with TFLN electro-optic modulators integrated on SiN achieve electro-optic bandwidths exceeding 100 GHz with drive voltages under 2V. In addition, on-chip III-V photodetectors deliver high responsivity at C-band and O-band and sub-picosecond response times.
The new platform is also said to dramatically lower power consumption per bit compared to traditional Mach-Zehnder structures and bulk modulators, addressing critical power budgets in modern AI clusters.
“Ten years ago, our goal was clear: turn the extraordinary research of low-loss SiN into a reliable, industrial-grade product offering. Celebrating our 10th anniversary at ECOC in Malaga while maturing TFLN and integrated III-V photodetectors is a testament to our continuous pursuit of innovation. This hybrid platform combines ultra-low loss routing with ultra-fast modulation and detection, giving our customers the ultimate toolset for next-generation photonic engines," said Michael Geiselmann, CCO and co-founder of Ligentec.
