Toshiba launches 3300V SiC MOSFET module
Toshiba Electronic Devices has launched a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems.
The 3300V module (IX800FXF2YMS4) features Toshiba’s third-generation SiC MOSFET chips, a drain-source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I2t limit value in the diode section, an indicator of surge current capability.
The module has a drain-source on-voltage (sense) (VDS(on)sense) of 1.4V (typ.) which helps reduce conduction losses. Its turn-on switching loss (Eon) of 185mJ (typ.) and turn-off switching loss (Eoff) of 175mJ (typ.) help reduce switching losses. These characteristics contribute to improved equipment reliability and efficiency, and to smaller cooling systems, according to the company.
The new product adopts the iXPLV package, which is said to offer excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of bonded sections with SiC chips, achieving the 175°C channel temperature rating required for industrial equipment.
This new addition is the fourth Toshiba SiC MOSFET module in the iXPLV package.
