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Friday 21st December 2012
With a new factory, Soitec will become one of the top three manufacturers of solar modules in the USA
Friday 21st December 2012
The firm has been honoured for its commercially viable technology that enables large-scale production of highly efficient inexpensive QDs
Friday 21st December 2012
The gallium arsenide based devices are suited for use as first-stage LNAs in base station receivers, tower-mounted amplifiers and repeaters
Friday 21st December 2012
The reactors will be used for compound semiconductor microelectronics and optoelectronics research
Friday 21st December 2012
A new consortium has been set up to develop III-V diode-laser mini-bars for industrial applications
Friday 21st December 2012
The new strategic partnership will allow both companies to further their positions within the rapidly growing LED lighting market
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Friday 21st December 2012
The firm is expanding its nanotechnology and IP portfolio with atomic layer deposition to enhance capability in new market opportunities such as semiconductors
Friday 21st December 2012
II-VI has acquired the manufacturer of optical systems and components, including visible, infrared, and laser‐based systems
Friday 21st December 2012
The reactor will be used for the developing II-VI semiconductors
Wednesday 19th December 2012
The provider of sapphire substrates has secured a patent to ensure the platens facing the wafers are continuously self-conditioned and self-optimised
Wednesday 19th December 2012
The latest patent relates to a method of combining beams from individual QCL sources to create a single beam of greater combined power and/or a multiple wavelengths
Wednesday 19th December 2012
Although operations related to the impact from the floods in Thailand are fully restored, yearly revenues have decreased by over 18 percent
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Wednesday 19th December 2012
The firm's XLamp MK-R LEDs grown on silicon carbide deliver record-breaking efficacy and next-generation price-performance for LED arrays
Tuesday 18th December 2012
The provider for the recovery of used slurry from the photovoltaic and semiconductor industries is following in the footsteps if its sole customer, REC Wafer Norway AS
Tuesday 18th December 2012
The firm's gallium nitride on silicon LEDs have been honoured in the SSL category
Tuesday 18th December 2012
Using a simple nitridation process, it is now possible to grow up to 25nm thick polar InN films with the surface Fermi level close to the valence band maximum. Substrates used include silicon (111) and GaN (0001)
Tuesday 18th December 2012
The analyst group are releasing a detailed report on the most likely 2013 scenario
Tuesday 18th December 2012
The integration of an indium phosphide chip with a silicon chip could be the key to faster and more powerful terahertz devices for high resolution and mobile applications
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Monday 17th December 2012
The price of gases used in III-V MOCVD growth will be increased by between 15 and 30 percent in the US, Canada and Puerto Rico
Monday 17th December 2012
The process, developed by Toshiba and Bridgelux, will be used to produce chips manufactured from gallium nitride on 200mm silicon wafers
Monday 17th December 2012
The CEO of the III-V fibre laser and amplifier manufacturer continues to beneficially own 15 percent of IPG Photonics common stock
Monday 17th December 2012
Scientists have demonstrated a 50 percent improvement of the dielectric breakdown field in silicon carbide MOSFETS
Friday 14th December 2012
The market will peak at $13.5 billion in 2015 but will remain relatively flat after that. This is mainly due to fewer LED replacements being required each year due to longer lifetimes
Friday 14th December 2012
The three year project announced by imec, will combine III-V high speed VCSELs with various silicon components to allow new functionalities such as wavelength multiplexing

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