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Friday 7th December 2012
MBE specialist and mid-infrared laser diode manufacturer Brolis Semiconductors officially opened their new MBE and laser diode production facility. The ceremony was led by H. E. The President of Lithuania Ms. Dalia Grybauskaite, who gave an opening speech, followed by the speeches from the co-founders of the company – Vizbaras brothers, TU Munich professor Markus-Christian Amann, HE Prime Minister of :Lithuania Mr. Andrius Kubilius, and the managing partner of the venture capital fund LitCapital, Mr. Sarunas Siugzda.
Friday 7th December 2012
Company founder and President Richard Distl sold Instrument Systems GmbH, established in 1986, to Konica Minolta Optics, Inc. The subsidiary company Optronik Berlin GmbH is also included in the sale.
Friday 7th December 2012
The indium gallium arsenide (InGaAs) triple junction based device has three photo-absorption layers which are stacked together
Friday 7th December 2012
The US firm's new packaging system broadens array performance at the same time as reducing the cost of LED lighting
Friday 7th December 2012
The indium phosphide platform based on PIC technology features 500 gigabit per second (Gb/s) long haul super-channels on its nationwide fibre optic al network
Friday 7th December 2012
The company has been recognised for creating technology innovations in green technology
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Friday 7th December 2012
The company says its latest multi-deposition systems are ideal for both small scale production and R&D prototyping for nanomaterials research
Thursday 6th December 2012
X-ray laser research has advanced the analysis of compound semiconductors and many other materials
Thursday 6th December 2012
Dynax Semiconductor is to receive its first Aixtron production system to manufacture gallium nitride on silicon carbide (SiC) and silicon substrates
Thursday 6th December 2012
Indium gallium arsenide is one of the several promising semiconductors being studied to replace silicon
Thursday 6th December 2012
The deal with Solar Junction, which produces 44 percent efficiency III-V wafers, should position IQE to become one of the key epiwafer suppliers to the CPV market
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Thursday 6th December 2012
The III-V gallium arsenide (GaAs) based monolithic platform could change the roadmap for smartphones, tablet and wearable computers
Thursday 6th December 2012
Sagem will transfer to Sofradir its indium antimonide (InSb) and indium gallium arsenide (InGaAs) technology
Wednesday 5th December 2012
Johnson Matthey have confirmed they will be Gold sponsors at the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013.
Wednesday 5th December 2012
At 930mW the 850nm chip, from an operating current of 1A, has a light output (under lab conditions) 25 percent higher than that of many of the chips currently available
Wednesday 5th December 2012
Indium gallium arsenide is one of the several promising semiconductors being studied to replace silicon
Wednesday 5th December 2012
The newly formed firm will use the reactors to manufacture III-nitride HB-LED wafers
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Wednesday 5th December 2012
These devices, many based on indium phosphide (InP) and gallium arsenide (GaAs) technology, have changed the dynamics of the optical network industry
Tuesday 4th December 2012
First Solar will work with Zhenfa to deploy its cadmium telluride modules to power up the Xinjiang province
Tuesday 4th December 2012
The firm has secured a contract to produce indium phosphide wafers for lasers in telecommunications
Tuesday 4th December 2012
The ICOS WI-2280 system is designed to provide manufacturers with greater flexibility, reduced cost of ownership and improved efficiency
Tuesday 4th December 2012
The firm's process for lift-off compound semiconductor applications improves uniformity. It is also claimed to deliver up to 40 percent reduction in material consumption
Monday 3rd December 2012
After the spinoff, Siemens AG will hold a 17 percent stake in III-nitride manufacturer Osram, and the Siemens Pension Trust will hold a 2.5 percent stake

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