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Friday 22nd February 2013
The new WTR1625L and RF silicon front end chips harness radio frequency band proliferation, enabling OEMs to develop thinner, more power-efficient devices with global 4G LTE mobility
Friday 22nd February 2013
The new indium gallium phosphide based power amplifier is suited to WCDMA / LTE applications for picocells, enterprise-class femtocells, and CPE
Friday 22nd February 2013
The III-nitride LED innovator is continuing to drive the adoption of LED lighting with higher lumen outputs, new aperture and expanded options
Thursday 21st February 2013
The orbital-built satellite will use the firm's BTJ triple-junction III-V solar cells delivering 3,750W of power at the end of life
Thursday 21st February 2013
Following a management buyout, Albis Optoelectronics is resurfacing as one of the renowned industry brands for high performance indium phosphide photodetector products
Thursday 21st February 2013
The partnership is aimed at developing and marketing re-useable gallium nitride substrates for high-performance LED lighting applications
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Wednesday 20th February 2013
The firm's shares fell 0.39 percent to trade at $45.54 on Tuesday. Over the past year, the stock has been trading between $22.25 and $46.88
Wednesday 20th February 2013
With the gallium nitride power amplifier, the two firms have established a new Industry standard with significant energy and carbon footprint reductions
Wednesday 20th February 2013
The novel temperature sensing solution for MOCVD gallium nitride-based epitaxy provides true wafer surface temperature and reflectance instrumentation to improve efficiency and yield in the LED industry
Tuesday 19th February 2013
The firm used its indium phospide based DTN-X platform and worked with FSUE ZNIIS to perform the super-channel trial
Tuesday 19th February 2013
The silicon based CMOS power amplifiers, which use envelope tracking, boost the linearity, efficiency and output power for CMOS PAs beyond the performance of gallium arsenide PAs
Tuesday 19th February 2013
VI Systems has worked with the American university to develop a VCSEL which is suited for use in the next generation of datacom and computercom standards
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Monday 18th February 2013
The CdTe (cadmium telluride) solar cell manufacturer is branching out in this region with the new appointment of ex GE executive, Ahmed Nada
Monday 18th February 2013
The $7.2 million will be used to develop and market the firm's III-V GaAs (gallium arsenide) based solar cell technology
Monday 18th February 2013
The firm's latest UV pyrometer incorporates real-time UV emissivity correction for enhanced accuracy of gallium nitride surface temperature during the growth of complex LED structures
Monday 18th February 2013
The firm has revealed a new line of surface mount devices for high-volume cost sensitive markets
Monday 18th February 2013
Quantum dots can self-assemble at the apex of a GaAs/AlGaAs (gallium arsenide/aluminium gallium arsenide) core/shell nanowire interface. This breakthrough could bolster quantum photonics and solar cell efficiency
Friday 15th February 2013
The firm's latest gallium nitride on gallium nitride LED outperforms the previous best documented lab result
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Friday 15th February 2013
The firm has been recognised for the development of high-efficiency m-plane LEDs on bulk gallium nitride substrates
Friday 15th February 2013
A new quantum dot device composed of gallium arsenide and light-emitting crystal, marks a new age in the study and influence of living cells. The probe could be used for real-time sensing of specific proteins within cells and be adapted to sense biomolecules such as DNA or RNA
Friday 15th February 2013
The SPECTOR system will be used to produce high quality optical products such as lasers and those used in Raman spectroscopy, telecommunications, and aerospace
Friday 15th February 2013
Henkel has developed a new type of paste with enhanced thermal conductivity for power modules such as those based on gallium nitride and silicon carbide. It allows a higher power density for the same ageing resistance
Thursday 14th February 2013
Apart from securing financial backing, the firm has been awarded by Empa, an unnamed Swiss investor and the firm's existing Indian strategic investor, Tata
Thursday 14th February 2013
The LED and gallium nitride RF specialist and design and engineering innovator are uniting to accelerate the adoption of Cree's RF technology

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