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Friday 30th November 2012
Yes, according to Samsung. Rather than a gallium arsenide power amplifier, the mass produced 3G Samsung Galaxy Appeal is one of the first phones incorporating a silicon CMOS power amplifier
Friday 30th November 2012
The MOCVD and MBE equipment supplier intends to submit a plan by January 22nd, 2013 to regain compliance with NASDAQ’s listing rules
Thursday 29th November 2012
CS International are pleased to announce Bryan Bothwell, Strategy and Business Development Manager for TriQuint Semiconductor has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on Maximizing Gallium Nitride Product Solutions and Foundry Services for Advanced RF Design Success.
Thursday 29th November 2012
Translucent have confirmed they will be Gold sponsors at the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4h & 5th March 2013.
Wednesday 28th November 2012
The indium phosphide (InP) PIC provider and its Japanese partner says that this is a milestone for delivery of high capacity optical transmission over DSF fibre
Wednesday 28th November 2012
Skyworks, RFMD, Avago, TriQuint and Murata, to compete in this segment using GaAs, CMOS, RF MEMS and voltage-dependent dielectric variable capacitor technologies
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Tuesday 27th November 2012
GE's move will help its customers move rapidly towards an all-LED building envelope in new construction and retrofits, including retail, commercial and industrial high-bay applications
Tuesday 27th November 2012
Scientists say that cadmium selenide nanocrystal devices can move electrons 22 times faster than in amorphous silicon
Tuesday 27th November 2012
A tuneable material using sapphire and vanadium dioxide developed at Harvard boasts nearly 100 percent absorption on demand
Tuesday 27th November 2012
This new app for iPhones, iPads and Android Phones and Tablets allows you to keep bang-up-to-date with the CS industry while on the move
Tuesday 27th November 2012
The supplier of equipment related to the III-V industry has doubled its cleanroom space and is advancing long-term growth plans
Tuesday 27th November 2012
Combining aluminium gallium arsenide (AlGaAs) with a silicon device reaps the benefits of both technologies
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Monday 26th November 2012
The firm says its new process enables more robust, high-efficiency gallium nitride (GaN) RF devices
Monday 26th November 2012
The agreement is to generate cash and strengthen the firm's existing relationship with II-VI and Photop Technologies
Monday 26th November 2012
The supplier of productivity-enhancing instrumentation and controls is branching out into NIR spectroscopy
Monday 26th November 2012
The seminar, describing compound semiconductor characterisation, was the largest one yet and attracted attendees from both academia and industry
Friday 23rd November 2012
The firm aims to expand its CIGSSe thin film module manufacturing in California and Mississippi
Friday 23rd November 2012
The firm's indium phosphide (InP) based DTN-X platform has been awarded for its strength in bandwidth demands driven by video, high speed data and cloud-based services
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Thursday 22nd November 2012
CS International are pleased to announce Vijit Sabnis, Vice President Technology at Solar Junction has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on PV Chip Development.
Thursday 22nd November 2012
The firm's nitride MJT series enables lighting manufacturers to deliver fixture level performance up to 100 lumens per watt. Also, the MJT series is designed on widely used 5630 and 3528 packages and improves compatibility with conventional dimmers
Wednesday 21st November 2012
The firm's indium phosphide (InP) based DTN platform will be used to bring together Europe's major business areas
Wednesday 21st November 2012
The RF device manufacturer has made leadership changes to enhance focus and drive its products forward
Wednesday 21st November 2012
The patent, regarding a green method of manufacturing II-VI quantum dots, will provide precise control of both QD shape and dimension during synthesis
Wednesday 21st November 2012
The III-V solar cells will be used in the 200 kilowatt system at Edwards Air Force Base in 2013

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