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Wednesday 6th February 2013
The firm says this module sets a new world record for monolithic thin-film module efficiency. It was produced using the current manufacturing equipment and materials at the company’s manufacturing facility in Taichung, Taiwan
Wednesday 6th February 2013
The solar firm has approved the acquisition of a 20 percent equity ownership in BC-based Premier Global Holdings Corporation
Wednesday 6th February 2013
The III-V nitride firm will be instrumental in this global sustainable design event
Tuesday 5th February 2013
LEDs, solar cells and sensors could benefit from a new technology to study the interface between the core and shell of quantum dots composed of CdTe based materials
Tuesday 5th February 2013
One of the key factors contributing to market growth in semiconductors is the high thermal conductivity of gallium nitride over other non-silicon substrates
Tuesday 5th February 2013
The CdTe solar provider says, once the task is complete, it will be the state's largest solar power project
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Tuesday 5th February 2013
The breakthrough improves printing quality in III-V laser diodes
Monday 4th February 2013
The firm says its aluminium nitride substrates have exhibited record-breaking performance in optically pumped, 264 and 280 nm lasers
Monday 4th February 2013
The agreement aims to focus on standards and roadmap development for the solar thin film industry and will start with CIGS advancement
Monday 4th February 2013
The EPC9004 gallium nitride FETs are combined with a dedicated GaN gate driver from Texas Instruments
Monday 4th February 2013
The firm says its customised substrates, which include GaAs, provide a foundation for manufacturing for the consumer electronics markets
Friday 1st February 2013
Minute LED lights could deliver Wi-Fi-like internet communications
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Friday 1st February 2013
After the merger of the two LED subsidiaries of AU Optronics (AUO), Lextar will have capital values at US $169 million), Lextar will have capital values at US $169 million
Friday 1st February 2013
The companies will install CIGSSe playground solar project as part of a community initiative
Friday 1st February 2013
The InP (indium phosphide) based devices are being deployed for the Integration of network elements
Thursday 31st January 2013
The company delivered revenue of $454 million, up 15 percent Year-Over-Year
Thursday 31st January 2013
Early results using compound semiconductors and processes achieve a milestone towards low-power tunnel transistor electronics
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Thursday 31st January 2013
The compact gallium arsenide power amplifier saves board space and enables high levels of integration
Thursday 31st January 2013
The silicon carbide "foundry" facility has been officially opened for power electronic device development
Wednesday 30th January 2013
The multi-junction solar cell to Space Systems/Loral (SS/L) will represent more than a megawatt of power delivered into space
Wednesday 30th January 2013
The firm's latest device enables higher flow rates for mini Coriolis flow meters
Wednesday 30th January 2013
The provider of gallium arsenide (GaAs) and indium phosphide (InP) products is suing for misappropriation of trade secrets
Wednesday 30th January 2013
The indium gallium arsenide device is suited to identifying dark or live fibre and excessive losses due to misalignment of mechanical splices or poor connections

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