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Tuesday 13th November 2012
The Taiwanese company is expanding its MOCVD manufacturing capacity to grow gallium arsenide based lasers
Tuesday 13th November 2012
The firm's five new 3-in-1 full colour nitride LEDs and lamps for indoor, semi-outdoor and outdoor applications, combine performance with efficiency
Tuesday 13th November 2012
The gallium nitride transistors are optimised for broadband applications requiring linear back-off operation or reduced spurious performance
Tuesday 13th November 2012
The strained quantum well indium phosphide design is ideally suited for moisture detection
Tuesday 13th November 2012
Using multiple tiers of indirect bandgap semiconductors, such as silicon and germanium, it is claimed that efficiencies of 40 percent can be reached
Monday 12th November 2012
IQE, supplier of advanced semiconductor wafer products and services to the semiconductor industry, has announced the winning of the title of Company of the Year at the Western Mail / Institute of Welsh Affairs Business Awards staged at Cardiff City Hall, UK on 9th November.
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Monday 12th November 2012
The Taiwanese company will present its most updated series of LED packages for infrared and sensor, general lighting, TFT LCD backlight, signage and intelligent digital display applications
Monday 12th November 2012
The global supplier of advanced semiconductor wafer products and services to the semiconductor industry, won the over £10 million turnover award
Monday 12th November 2012
The firm's new "Instant Bandwidth" software enables Infinera's indium phosphide on DTN-X platform
Monday 12th November 2012
The firm's ELITE system comprises a laser marker, full IR lens options, double-sided probing and high voltage power analysis capability for silicon carbide device inspection
Monday 12th November 2012
The company says it is introducing industry’s first fully qualified, production-ready all-silicon carbide power module
Monday 12th November 2012
RFMD’s RFHA104x series of high-power gallium nitride broadband power transistors (BPTs) are optimised for military communications, commercial wireless infrastructure, and general purpose applications
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Friday 9th November 2012
The Japanese firm is branching out into gallium nitride on silicon to serve servers
Friday 9th November 2012
Anadigics has shipped production volumes of single-band and dual-band indium gallium phosphide based PAs in the United States and Asia
Friday 9th November 2012
Skyworks Solutions reported fourth fiscal quarter and year end 2012 results for the period ending September 28, 2012. Revenue for the quarter was $421.1 million, up 8.2 % sequentially and exceeded the Company’s updated guidance of $420 million provided during its analyst day on September 20, 2012.
Friday 9th November 2012
Revenues for the three months ended September 29, 2012 were $21.9 million, compared with $29.6 million in the third quarter of 2011. III-V product revenues were $13.7 million, compared with $15.5 million for the third quarter of 2011, reflecting slower growth in mobile phone demand in the 2012 period. Display product revenues decreased to $8.2 million from $14.1 million for the same period of last year due to lower revenue from the Company’s military display products in the 2012 period.
Friday 9th November 2012
Skyworks increased its share of the market for RF power amplifiers (PAs) for cellular terminals, increasing its lead on second-ranked RFMD. The market for linear PAs for CDMA / W-CDMA / LTE increased with higher volumes of UMTS smartphones, which helped Avago Tech capture the lead in W-CDMA PA share with its high-performance, best-in-class PAs.
Friday 9th November 2012
Soitec has announced it has more than doubled production of bonded silicon-on-sapphire (BSOS) substrates to meet increased demand from its strategic partner, Peregrine Semiconductor Corporation. Peregrine Semiconductor, a fabless provider of high-performance radio frequency integrated circuits (RFICs), has increased peak-production capability of its latest-generation STeP5 UltraCMOS® technology-based RF switches to more than two million units a day, to support design wins in the Radio Frequency Front Ends (RFFEs) of today’s most advanced 4G smart phones, and other wireless-communication applications. These wins established Peregrine Semiconductor as the market leader for the main RF antenna switch for cellular handsets1.
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Friday 9th November 2012
Hittite Microwave Corporation has released a new Receiver (Rx) and Transmitter (Tx) Radio Frequency Integrated Circuit (RFIC) chipset which is ideal for frequency conversion applications in wireless infrastructure equipment such as base transceiver stations, remote radio units, small cells and repeaters from 700 – 3500 MHz.
Friday 9th November 2012
Oxford Instruments Plasma Technology has recently launched a new range of system upgrade options for their leading-edge etch and deposition tools.
Friday 9th November 2012
ARC Energy has announced a new publication detailing the advantages of its CHES™ c-axis sapphire growth technology. CHES achieves 75% or greater material utilization across large diameter sapphire substrate sizes compared to 10-20% utilization for a-axis grown sapphire boules. CHES large diameter wafers cost less, lead to higher LED production throughput per MOCVD run, and have properties (such as lower, more uniform bow) that enable lower cost per lumen. The publication, called "Sapphire That Scales," is the latest in ARC Energy's CHES Foundations series which explains the advantages of CHES technology and furnaces.
Friday 9th November 2012
Brolis Semiconductors and Veeco Instruments have announced that Brolis has received shipment of a Veeco GEN200(R) Edge(TM) Molecular Beam Epitaxy (MBE) production system for installation at their new epitaxial wafer production facility in Vilnius, Lithuania.
Friday 9th November 2012
Skyworks Solutions has announced that its Board of Directors has authorized the repurchase of up to $200 million of the company's common stock from time to time on the open market or in privately negotiated transactions.
Friday 9th November 2012
The commitment for 2013, is for indium phosphide based high-speed optical receivers

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