Littelfuse Announces 1700V, 1Ω SiC MOSFET
Littelfuse has introduced its first 1700V SiC MOSFET, the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices which includes 1200V SiC MOSFETS and Schottky diodes. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.
When compared to similarly-rated Si IGBTs, the 1Ω LSIC1MO170E1000 SiC MOSFET enables increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.
Additionally, the Littelfuse SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. Typical applications for the SiC MOSFET LSIC1MO170E1000 include: solar inverters, switch-mode and uninterruptible power supplies, motor drives, high-voltage DC/DC converters, and induction heating.
"This product can improve existing applications, and the Littelfuse application support network can help new design-in projects," said Michael Ketterer, global product marketing manager, Power Semiconductors at Littelfuse.
"SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its silicon MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances."
The new SiC MOSFET is available in a TO-247-3L packages.
