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Friday 18th January 2013
Despite this positive sign the situation of the global PV industry remains critical and a substantial recovery of the supply-demand balance is not expected to occur before the second half of 2013
Thursday 17th January 2013
The company is now manufacturing a 0.06W UV III-nitride LED for consumer applications
Thursday 17th January 2013
The gallium nitride power transistors are optimised for efficiency and offer lower overall system costs
Wednesday 16th January 2013
The new silicon carbide products offer industrial and extended temperature ranges
Wednesday 16th January 2013
The tool is designed for reactive process monitoring
Wednesday 16th January 2013
III-nitride LED packaging will drive new technology and design adoption
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Wednesday 16th January 2013
The halogen replacement lamps use gallium nitride (GaN) chip technology
Wednesday 16th January 2013
Conference speakers from Osram, Philips, Bridgelux, Veeco will participate in one of the largest exhibitions and conferences in the world dedicated to LED technology and manufacturing
Wednesday 16th January 2013
Plant Engineering China has recognised the Spectra-G 3000 in the "Environmental Health" category for its role in LED production
Tuesday 15th January 2013
Microsemi, a provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced the availability of a new generation of industrial temperature, silicon carbide (SiC) standard power modules. They are ideally suited for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters, oil exploration and other high power, high voltage industrial applications requiring high performance and reliability. The power module family is also offered with extended temperature ranges to meet next-generation power conversion system requirements for higher power densities, operating frequencies and efficiencies.
Tuesday 15th January 2013
Grown on indium phosphide (InP), the cell is based on the band structure of InAlAsSb used in detector and laser applications
Tuesday 15th January 2013
The system will be used for gallium arsenide (GaAs) laser diode development
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Tuesday 15th January 2013
Cree introduces the LR6-10L six-inch LED downlight delivering 1000 lumens of exceptional 90+ CRI light while achieving 90 lumens per watt.
Tuesday 15th January 2013
The CRIUS II-L systems will be configured to mass produce gallium nitride (GaN) LED epitaxial wafers
Tuesday 15th January 2013
Revenue for FYQ1 2013 was $6.2 million, an 8 percent decrease compared to $6.7 million in FYQ1 2012
Monday 14th January 2013
RF Micro Devices the designer and manufacturer of high-performance radio frequency components, today introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD’s newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150GHz – 5.850GHz frequency band and is optimized to support multiple applications, including notebooks, mobile routers, and low-power customer premises systems.
Monday 14th January 2013
The devices are believed to exhibit the lowest specific contact resistivity (rc) ever reported for CMOS-compatible non-gold ohmic contacts for conventional gallium nitride HEMTs on a silicon substrate
Friday 11th January 2013
The low energy wireless technology can enable smartphones, tablets and other connected devices to control systems such as lighting in the home
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Friday 11th January 2013
The CdTe (cadmium telluride) solar project will generate enough electricity to power approximately 50,000 average California homes and create 250 construction jobs
Friday 11th January 2013
Despite some revenue growth, the GaAs, GaN, SiC and SiGe markets are suffering at the expense of a stronger silicon market
Friday 11th January 2013
The firm was affected by weaker demand and a push-out into the first half of 2013 of some anticipated deployments within the company’s optical product line
Thursday 10th January 2013
The firm has remained tight lipped about the prospective purchase
Thursday 10th January 2013
The company hopes to meet the growing demands of III-V semiconductor companies by offering its growth, fabrication, testing and production facilities
Thursday 10th January 2013
Recent research demonstrates the feasibility of achieving high performance III-nitride HEMTs on 8 inch diameter Silicon (111) for high-frequency and high-power device applications

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