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Friday 9th November 2012
Soitec has announced it has more than doubled production of bonded silicon-on-sapphire (BSOS) substrates to meet increased demand from its strategic partner, Peregrine Semiconductor Corporation. Peregrine Semiconductor, a fabless provider of high-performance radio frequency integrated circuits (RFICs), has increased peak-production capability of its latest-generation STeP5 UltraCMOS® technology-based RF switches to more than two million units a day, to support design wins in the Radio Frequency Front Ends (RFFEs) of today’s most advanced 4G smart phones, and other wireless-communication applications. These wins established Peregrine Semiconductor as the market leader for the main RF antenna switch for cellular handsets1.
Friday 9th November 2012
Hittite Microwave Corporation has released a new Receiver (Rx) and Transmitter (Tx) Radio Frequency Integrated Circuit (RFIC) chipset which is ideal for frequency conversion applications in wireless infrastructure equipment such as base transceiver stations, remote radio units, small cells and repeaters from 700 – 3500 MHz.
Friday 9th November 2012
Oxford Instruments Plasma Technology has recently launched a new range of system upgrade options for their leading-edge etch and deposition tools.
Friday 9th November 2012
ARC Energy has announced a new publication detailing the advantages of its CHES™ c-axis sapphire growth technology. CHES achieves 75% or greater material utilization across large diameter sapphire substrate sizes compared to 10-20% utilization for a-axis grown sapphire boules. CHES large diameter wafers cost less, lead to higher LED production throughput per MOCVD run, and have properties (such as lower, more uniform bow) that enable lower cost per lumen. The publication, called "Sapphire That Scales," is the latest in ARC Energy's CHES Foundations series which explains the advantages of CHES technology and furnaces.
Friday 9th November 2012
Brolis Semiconductors and Veeco Instruments have announced that Brolis has received shipment of a Veeco GEN200(R) Edge(TM) Molecular Beam Epitaxy (MBE) production system for installation at their new epitaxial wafer production facility in Vilnius, Lithuania.
Friday 9th November 2012
Skyworks Solutions has announced that its Board of Directors has authorized the repurchase of up to $200 million of the company's common stock from time to time on the open market or in privately negotiated transactions.
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Friday 9th November 2012
The commitment for 2013, is for indium phosphide based high-speed optical receivers
Thursday 8th November 2012
TriQuint has announced its financial results for the quarter ended September 29, 2012, including the following highlights:
Wednesday 7th November 2012
The company's latest semiconductor LED light sources are used in the automotive sector, the entertainment industry and the security environment
Wednesday 7th November 2012
Using gallium nitride as a substrate reduces defect density. Wafers are currently available in 2 inch but the firm is aspiring to provide 6 inch GaN wafers
Tuesday 6th November 2012
The company has signed a power purchase agreement covering its soon to be built 44 MWp Touwsrivier power plant
Tuesday 6th November 2012
Lux Research says that GaN substrates can displace cheaper silicon by offering 360 percent to 380 percent better performance
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Monday 5th November 2012
The course focussed on LED production and included costs, opportunities and potential in the industry
Monday 5th November 2012
Under the terms of the agreement, RFMD will acquire Amalfi with cash on hand for total consideration of approximately $47.5 million, net of cash received
Monday 5th November 2012
CS International are pleased to announce Rainer Krause, Director Smart Cell Incubator Unit -Soitec has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on PV Chip Development.
Monday 5th November 2012
The firm's new copper-indium-gallium-diselenide technology should benefit products that operate at higher temperatures
Sunday 4th November 2012
The firm's quarterly revenues have slid by over 25 percent
Friday 2nd November 2012
MBE specialist and mid-infrared laser diode maker Brolis Semiconductors announces the date for the launch of their new facility to be set for December 5, 2012.
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Friday 2nd November 2012
Brolis Semiconductors is launching a new facility on December 5th, 2012
Thursday 1st November 2012
A new feature of Quartz PCI software, works with a single image or a group of images of III-V semiconductors
Thursday 1st November 2012
Infinera's indium phosphide PICs will be used for the island's 100G mediterranean subsea network
Thursday 1st November 2012
Total cumulative photovoltaic installations in Southeast Asia are forecast to reach almost 5GW by 2016
Thursday 1st November 2012
CRAIC is offering a tool which measures Raman spectra of micron-scale samples with multiple lasers ranging from 405 to 830nm
Wednesday 31st October 2012
Everlight has introduced several low, mid, and high power LED lighting components which have passed the LM80 test. This will enable the company to strengthen its concept of “The Right LED for The Right Application.”

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