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Wednesday 31st October 2012
Based in Silicon Valley, California, CMO, Alan Hallberg will oversee RFMD’s global marketing activities
Wednesday 31st October 2012
With an efficiency of over 20 percent, and a spectral width of ~ 1nm the array is suited to medical and illumination applications
Wednesday 31st October 2012
IPtronics is suing Avago for violating standards and misuse of trade secrets regarding its 40G and 100G VCSEL multimode optical communications technology
Tuesday 30th October 2012
Each III-nitride LED has 4 pins and each colour can be controlled individually
Tuesday 30th October 2012
Gallium arsenide revenue will approach $348 million in 2016
Tuesday 30th October 2012
One reactor will be used to grow production GaN-on-silicon wafers and HEMTs. The 2-inch R&D system is intended for growing gallium nitride lasers
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Tuesday 30th October 2012
The firm's gallium nitride power devices reduce operational and capital expenses and could help reduce global energy consumption
Tuesday 30th October 2012
CS International are pleased to announce Michael Lebby, General Manager & Chief Technology Officer-Translucent Inc has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on The Challenges and Opportunities of Using Epitaxial Gan, Gesn, and Rare Earth Oxides on Large Format Silicon Wafers for Power Electronics, Solar, and Lighting.
Tuesday 30th October 2012
The firm aims to use the veteran's expertise to market its III-V compound semiconductor solar technology
Tuesday 30th October 2012
A joint-development program between the two companies will extend applications for detecting defects and impurities in semiconductor chips
Monday 29th October 2012
The partnership is part of Soraa's worldwide strategic sales initiative. The company's gallium nitride on gallium nitride LED lamps will be available throughout many east Asian countries and Europe
Monday 29th October 2012
The robust LEDs are suited for use in high-contrast displays in outdoor applications
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Monday 29th October 2012
The firm's four gallium arsenide amplifiers are suited for use in microwave radios, very small aperture terminals and military applications
Monday 29th October 2012
The firm's gallium nitride devices are suited to broadband systems used in commercial and military applications
Monday 29th October 2012
The independently verified impurity levels in gallium nitride grown by the Australian company are comparable to those grown in MOCVD grown layers
Monday 29th October 2012
The silicon carbide power module for CNC drive units offers higher speed and torque for driving machine tool spindles and servo motors
Friday 26th October 2012
In the transfer of its gallium nitride LED business to TS Opto, SDK will transfer 70 percent of common shares in TS Opto to Toyoda Gosei. This will, make TS Opto a joint venture between the two companies and help accelerate LED development
Friday 26th October 2012
Revenues for Q3 2012 were $200.8 million, down 7 percent from the Q3 2011
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Friday 26th October 2012
Companies need innovative tools to differentiate from their cheaper Chinese rivals. Cadmium telluride, CIGS and silicon cell manufacturers currently have an overcapacity of 82 percent
Friday 26th October 2012
The Oslon LX LED can be used to provide affordable LED solutions for the high end to subcompact automobile market
Thursday 25th October 2012
Indium arsenide QDs offer a better alternative to gallium arsenide and may allow quantum researchers to manipulate a large number of qubits, enough for a practical machine
Thursday 25th October 2012
The firm will combine diamond substrates with its gallium nitride-on-silicon carbide power technology to improve power density and power handling
Thursday 25th October 2012
The 1kV/ 30A IV pulse tool provides high voltage signals and short pulse / fast switching capabilities in gallium nitride and silicon carbide devices simultaneously
Thursday 25th October 2012
The firm is introducing four gallium nitride based power transistors and four gallium arsenide based pHEMT power amplifiers. They are suited to applications such as emergency responder radios, electronic warfare, radar solutions and test equipment

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