X-Fab to double 6inch SiC capacity
X-Fab Silicon Foundries, an analogue/mixed-signal and specialty foundry group, has announced plans to double its 6-inch SiC process capacity at its fab in Lubbock, Texas in response to increased customer demand for high efficiency power semiconductor devices.
In preparation for doubling capacity, X-Fab Texas has purchased a second heated ion implanter for use in manufacturing 6-inch SiC wafers. Delivery of this heated ion implanter is expected by the end of 2018, and production release is planned during the first quarter of 2019 in time to meet projected near-term demand.
X-Fab was the first wafer foundry to offer SiC manufacturing on 6-inch wafers. This doubling of X-Fab's SiC process capacity furthers its strategy to remain the premier 6-inch SiC wafer foundry. According to Lloyd Whetzel, CEO of X-Fab Texas: "With the rising popularity of SiC we understood, early on, that increasing our ion implant capability would be critical to our continued manufacturing success in the SiC marketplace. This is just the first step in our overall capital plan for SiC-specific manufacturing process improvements. This step also enables X-Fab to demonstrate our commitment to the SiC industry and maintains our leadership position in the SiC foundry business."
The company says its SiC process capabilities for power semiconductors include superior high voltage operation, significantly lower transistor On-resistance, significantly lower transmission and switching losses, extended high temperature operation as high as 204degC, higher thermal conductivity, very high frequency operation, and lower parasitic capacitance. The process capabilities allow customers to realise high efficiency power semiconductor devices including high power MOSFETs, JFETs, and Schottky diodes.
