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Tuesday 10th April 2012
The firm has increased manufacturing capacity for its High Purity MetalOrganics (HPMO) product range, and is now producing Cp2Mg. This adds to AkzoNobel's metalorganic portfolio ; materials which are used in the production of compound semiconductor wafers grown by MOCVD
Tuesday 10th April 2012
The firm's latest family of LED street lights use innovative technologies to further obsolete inefficient predecessors
Tuesday 10th April 2012
Branching out with smartphone customers, products, technology and market applications have enabled Skyworks to perform way over the odds, along with WIN Semiconductors
Tuesday 10th April 2012
The new LUXEON M LED, designed for industrial outdoor applications, like streetlights, improves the design and reduces the cost of new products in much the same way the LUXEON Rebel did in 2007
Monday 9th April 2012
Lamp manufacturers will continue to benefit from the oversupply of LED governmental subsidies. The LED replacement market unit growth rate is expected to be the highest in China at 44% CAGR
Saturday 7th April 2012
The Cetero SLM will offer light output ranging from 800 to 2300 lumens across multiple colour temperatures all in one common form factor
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Friday 6th April 2012
The novel laser traps a million rubidium atoms in a space of about 2 centimetres between two mirrors. The atoms synchronise their internal oscillations to emit laser light
Friday 6th April 2012
Although second-quarter net loss was 26 cents per share, the company fared slightly better than the loss of 27 cents per share expected by analysts. Revenues of $7.9 million, compared to $10.0 million in the same quarter last year, was also slightly better than the $7.5 million predicted by analysts. The outlook for the third fiscal quarter though, is disappointing
Friday 6th April 2012
Stock will begin trading on a split adjusted basis on April 9, 2012
Thursday 5th April 2012
The CCS reactor will be used in the development of long-wavelength lasers for applications in telecom, data-com, and sensor networks
Thursday 5th April 2012
Optimising high frequency and power performance, the 3" wafer-level process enables lithographic access to both the front- and backside of an Indium phosphide HBT. The vital step in gaining access to both sides is to completely remove the supporting substrate
Thursday 5th April 2012
Cree's revolutionary luminaires are suited for architectural street, area and security lighting
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Thursday 5th April 2012
The promotion aims to ensure that the firm aligns more effectively with its customers and the provision of high technology products and services geared to their specific requirements
Thursday 5th April 2012
The amended share purchase mandate permits the company to repurchase up to 10 percent of its outstanding ordinary shares before its 2013 AGM
Thursday 5th April 2012
Molybdenum mixed with small amounts of tantalum combine the advanced properties of both metals as a back contact for CIGS solar cells
Thursday 5th April 2012
The firm says the guaranteed minimum CRI, specified R9, and leading performance over time bring newfound confidence to solutions with white mid-power LEDs
Wednesday 4th April 2012
The pioneer in III-V compound semiconductor APD and PIN photodiode technology will unite with ACT to provide the T-gauge system for use in terahertz industrial process control
Wednesday 4th April 2012
The new 2000 and 3000 lm modules are aimed at eliminating the need for compact fluorescents in commercial lighting
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Wednesday 4th April 2012
The 400-315nm UVA business is currently dominating the UV LED market and will remain to for at least the next five years. These LEDs employ III-nitride based materials
Wednesday 4th April 2012
The Big Chip nitride LED manufacturer is now qualified in ISO 14001:2004 and OHSAS 18001:2007
Wednesday 4th April 2012
Gallium arsenide is still dominating the PA market by far but is poised to lose market share as CMOS PA technology advances. At the antenna switch level, players with early involvement in SOI switches, like Skyworks and RFMD are gaining market share over players involved in GaAs, such as TriQuint
Tuesday 3rd April 2012
The double 1 x 2-inch system will be used to develop III-V-based optoelectronics, high-efficiency CPV and III-V-integration on silicon and germanium
Tuesday 3rd April 2012
Researchers have used a simulation of indium arsenide quantum dots, comprised an indium-rich central core surrounded by an indium-poor region. This model enables accurate reproduction of experimentally measured optical spectra
Tuesday 3rd April 2012
The devices employ the firm's high reliability indium gallium phosphide / gallium arsenide HBT process technology. They are particularly suited to commercial and defence applications

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