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Wednesday 13th June 2012
The new RFVA0016 amplifier for broadband applications incorporates RFMD's gallium arsenide HBT, indium gallium arsenide HBT and LDMOS technology
Tuesday 12th June 2012
The first Aixtron CRIUS II-XL Reactor will be used to set up a process for growing gallium nitride-on-silicon LEDs
Tuesday 12th June 2012
The new RFPA1012 gallium arsenide HBT linear power amplifier is specifically designed for wireless infrastructure applications
Tuesday 12th June 2012
Suitable for cellular infrastructure applications, the RF power innovator adds the efficiency, performance and bandwidth advantages of gallium nitride technology to its portfolio
Tuesday 12th June 2012
The silicon germanium BiCMOS process was chosen over traditional gallium arsenide solutions due to its ability to operate in the 12GHz to 15GHz band. What's more, the process allows multiple analogue and digital functions to be integrated into a single chip
Tuesday 12th June 2012
Together, they will advance gallium nitride power devices for the development of high-power-density converters operating at temperatures of up to 300°C
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Tuesday 12th June 2012
The company intends to continue developing the POET platform which enables monolithic fabrication of integrated circuit gallium arsenide devices on a single wafer
Tuesday 12th June 2012
The pioneer of blue/white gallium nitride-based LEDs on silicon substrate says it is creating the opportunity for a sharp reduction of LED lighting prices
Tuesday 12th June 2012
A new material should enable even higher resolutions, lower power consumption, and higher performance touch screens, as well as narrower bezel widths for LCD display panels used in mobile devices such as smartphones
Monday 11th June 2012
The firm's flexible sheets of high efficiency gallium arsenide based solar cells enable adaptable form factors
Monday 11th June 2012
The physicist was awarded for her work on gallium indium phosphide / gallium arsenide solar research
Monday 11th June 2012
The American region and the Asia Pacific region (APAC) have an even market share this year. However, the APAC region is forecast to expand at a faster pace
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Monday 11th June 2012
The new cost-effective gallium arsenide CATV products simplify RF connectivity and are claimed to reduce BOMs & improve performance
Monday 11th June 2012
The firm will provide its cadmium telluride modules to AGL Energy
Monday 11th June 2012
The joint venture will leverage Intermolecular's high productivity combinatorial platform towards achieving higher cadmium telluride solar panel efficiencies
Friday 8th June 2012
The German firm expects to own the largest cadmium telluride solar module facility in Europe by the end of 2012
Friday 8th June 2012
Gallium indium phosphide cells have high quantum efficiency in wavelengths between 400 and 700 nm and an intrinsically low dark current. They provide high efficiency in lowlight conditions, such as underwater
Friday 8th June 2012
The firm has unveiled new centres in Shenzhen and Shanghai to aid customers in luminaire design and evaluation services to help accelerate LED product development
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Friday 8th June 2012
The flexible CIGS manufacturer has initiated an investor process which could lead to partial or total change in ownership and control of the company
Friday 8th June 2012
By using indium gallium arsenide technology, more efficient shape and colour sorting in berries is possible. This increases productivity, improves quality and reduces labour costs
Friday 8th June 2012
The transfer of RFMD's MBE growth facility to IQE should cut manufacturing costs
Thursday 7th June 2012
AQT Solar shows off CZTS solar module prototype
Thursday 7th June 2012
The PA designed for use in CW and pulsed applications, employs the firm's proprietary gallium nitride HEMT technology
Thursday 7th June 2012
The copper indium gallium di-selenide panels are suited to commercial roof top, ground mount and BIPV applications

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