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Transphorm cuts Noise with Third Generation GaN


Latest 650V GaN FETs feature lower EMI, increased gate noise immunity, and greater headroom in circuit applications

Transphorm has announced availability of its third generation (Gen III) 650V GaN FETs featuring lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications.

Gen III devices being released include the TP65H050WS 50 mΩ FET and TP65H035WS 35 mΩ FET, both available in standard TO-247 packages.

This latest generation of devices incorporates a new MOSFET along with other design modifications. These have resulted in an increased threshold voltage (noise immunity) to 4 V from 2.1 V for the previousGen II, eliminating the need for a negative gate drive. Gate reliability rating is ±20 V; an 11 percent increase versus Gen II. As a result, switching is quieter, and the platform delivers performance improvement at higher current levels with simple external circuitry.

"It's important to us to evolve our GaN technology based on customer need and real-world experience. Our Gen III FETs exemplify what's possible when we adhere to that basic philosophy," said Philip Zuk, VP of technical marketing, Transphorm.

"We've brought forth a safer, more cost-effective high-voltage GaN FET. We trust that these transistors will be seen by customers as the new power semiconductors delivering invaluable efficiency, high power handling capability and other performance advantages with ease of use," added Yifeng Wu, senior VP of engineering, Transphorm.

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