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Wednesday 7th December 2011
Japanese company Nippon Steel have developed a new method of producing 6" SiC wafers which can be used in large-area power devices for applications in automobiles and rapid-transit railways.
Wednesday 7th December 2011
Fraunhofer has been awarded for its work with CEA-LETI on developing reusable substrates for solar applications.
Wednesday 7th December 2011
The new company, SPP Technologies (SPT), is targeting device manufacturers of LEDs, RF power devices and MEMS.
Wednesday 7th December 2011
Defining the next steps for the Compound Semiconductor Industry,Dr. Philippe Roussel of Yole Développement will present the talk "Wide Bandgap device market update”.
Tuesday 6th December 2011
The Taiwanese firm will use the tool to manufacture indium gallium nitride epiwafers for HB-LEDs.
Tuesday 6th December 2011
The firm's III-V compound semiconductor multi-junction cells will be used to power the Cygnus cargo spacecraft to the International Space Station (ISS).
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Tuesday 6th December 2011
Louis Lam has more than 25 years of expertise in marketing and sales, and also experience in business development in the opto-semiconductor industry.
Tuesday 6th December 2011
The joint effort combines both companies’ expertise to provide a complete material, equipment and process solution, optimised for each individual customer’s process needs in thin wafer handling.
Tuesday 6th December 2011
IMS Research's "Global Monthly LED Lamp Retail Price Tracker" says that the biggest decline in LED lamp prices was seen in the Chinese market, where the average price fell 62% from $30 to $11.
Tuesday 6th December 2011
The firm's enhancement mode gallium nitride (eGaN) transistor is being adopted by customers as higher performance replacements for silicon-based MOSFETs
Tuesday 6th December 2011
The next generation facility provides high quality, large diameter sapphire wafer for markets including LED manufacturers.
Monday 5th December 2011
The talk outlined the best way to grow aluminium nitride on patterned sapphire substrate (PSS) for the fabrication of high quality gallium nitride LEDs.
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Sunday 4th December 2011
The firm is retaliating against Nichia's recent claims by filing a lawsuit in the Tokyo District Court; Everlight is seeking damages and demands that Nichia stops spreading false allegations.
Friday 2nd December 2011
The developer and manufacturer of LED lighting technologies and products was ranked 58th on the list of 100 privately-held American companies selected from 22 industries.
Friday 2nd December 2011
The award is to develop gallium nitride class E power amplifiers that incorporate supply modulation and control enabled by novel power switch technology.
Friday 2nd December 2011
The firm's gallium nitride devices received dual honours in the categories of Energy-Savings Technology and RF/HFC Technology.
Friday 2nd December 2011
The firm impressed judges with its continuously changing product range which have adapted to the international market over the past three years.
Friday 2nd December 2011
Manz believes CIGS thin-film technology is the last step toward solar power, being able to compete with other sources of solar energy without subsidies.
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Friday 2nd December 2011
Low insertion loss and small package size of the gallium arsenide MMIC switch enable combo wireless designs at frequencies from 0.5 to 6.0 GHz.
Friday 2nd December 2011
Funding by Khosla Ventures and NEA will help to develop and commercialise blue and green lasers grown on non-polar and semi-polar gallium nitride substrates.
Thursday 1st December 2011
The JV LED manufacturing company involving Changzhi High Tech Industry Investment, China, and Arima Optoelectronics from Taiwan aims to boost HB LED capacity
Thursday 1st December 2011
The innovator of high reliability analogue and mixed signal semiconductors will acquire the outstanding shares of AnalogicTech for $5.80 per share in cash.
Thursday 1st December 2011
The firm's III-V compound semiconductor solar cells have a beginning-of-life conversion efficiency nearing 30% and the option for a patented, onboard monolithic bypass diode
Thursday 1st December 2011
The presentation will describe the potential for arsenide/antimonide based materials for integration into future ultra low voltage electronic devices.

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