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Tuesday 11th October 2011
The epitaxially grown aluminium indium nitride technology will allow the firm to further develop next generation high power, very high-frequency RF components.
Tuesday 11th October 2011
Imec’s silicon germanium integrated CMOS circuit showed no significant deterioration after MEMS processing.
Tuesday 11th October 2011
Funded by the AFFIRMA group, which owns Isofoton, the solar cell manufacturer, which uses III-V semiconductors in some of its products, is helping people affected by difficult situations.
Tuesday 11th October 2011
To reach this verdict, the jury heard testimonies from two of the inventors of the patent in question, experts in lasers, amplifiers and optics, and employees from both IPG and IMRA.
Tuesday 11th October 2011
The new wideband gallium nitride HEMT delivers 18-W in defence / commercial applications to 6 GHz and can reduce costs through high efficiency, output and power gain.
Tuesday 11th October 2011
Products to be exhibited at EuroMW2011 in Manchester, UK include gallium nitride on silicon carbide transistors and highly integrated pallet amplifiers – powered by a proprietary 0.5 micron HEMP design.
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Tuesday 11th October 2011
The firm says the results of this project can be extended to all the wavelengths in the aluminium indium gallium phosphide (AlInGaP) range to boost efficiency.
Tuesday 11th October 2011
The compact spectrometer can support a broad range of applications in multiple industries including compound semiconductors.
Tuesday 11th October 2011
The Chinese firm will use one of the two reactors to produce 4” arsenide and phosphide based LED materials and the other to produce 4” silicon carbide based epiwafers.
Monday 10th October 2011
The provider of materials, including those used in silicon germanium chip production, that enhance the performance of compound semiconductor chips and solar cells is expanding.
Monday 10th October 2011
Sparton says it has the capacity to be the 7th largest primary producer of
Monday 10th October 2011
The firm’s growth partly to large design wins across markets including smartphones, tablets, 3G/4G base stations, optical networks and cable systems.
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Monday 10th October 2011
The firm will present results on its III-V, silicon germanium and E-GaN products.
Monday 10th October 2011
The silicon germanium devices open new avenues in wireless communications and imaging.
Monday 10th October 2011
The earth observation military satellite contract increases Sofradir’s achievements in supplying state-of-the-art IR detectors based on mercury cadmium telluride technology, for space applications.
Friday 7th October 2011
The firm says it has recently received a lot of interest from South Korean companies regarding its CIGS products.
Friday 7th October 2011
The firm has been acknowledged for eliminating banned or controlled hazardous materials and promoting the use of environmentally friendly materials.
Friday 7th October 2011
The firm has strengthened its compound semiconductor materials business to cope with demand for high frequency devices which use gallium arsenide and gallium nitride epiwafers.
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Friday 7th October 2011
The firm is looking to increase its market share in LED based technologies and light management systems.
Friday 7th October 2011
Designed for use in solar micro inverters, the silicon carbide based TO-252 D-Pak devices are now available in 2A, 5A, 8A & 10A ratings.
Thursday 6th October 2011
The solar cell manufacturer, which uses III-V semiconductors in some of its products, will aid development in energy and the environment.
Thursday 6th October 2011
The plasma enhanced atomic layer deposition system can be used in a variety of applications including compound semiconductor growth.
Thursday 6th October 2011
The semiconductor expert takes responsibility for worldwide opto component production.
Thursday 6th October 2011
Deloitte Technology Israel Fast 50 has acknowledged the company which manufactures X-ray equipment used to characterise gallium arsenide, gallium nitride and indium phosphide wafers.

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