Loading...
News Article

Wolfspeed SiC Technology boosts datacentre efficiency

News

SiC MOSFET technology enables power supplies to Ashieve 80+ Titanium efficiency eating in datacentre applications

Wolfspeed, a Cree company, has developed a reference design around its latest low-inductance SiC MOSFET that allows datacentre power supplies to achieve or exceed an 80+ Titanium rating.

The design demonstrates the implementation of a totem-pole PFC topology in a 2kW bridgeless power supply that is capable of easily exceeding the 80+ Titanium standards, with actual results of 98.7 percent peak efficiency at half load and 98.55 percent efficiency at full load "“ both taken at 230V redundant operation.

Power supply design engineers have faced significant challenges in attaining these efficiency levels using conventional silicon switching devices due to their higher losses and the need for more complex topologies.

"Using Wolfspeed's latest SiC MOSFETs in a totem-pole PFC design allows our server power systems to achieve an 80+ Titanium efficiency rating," said Nash Chen, staff engineer for cloud computing at Chicony Power Technology. "Wolfspeed's MOSFETs also enabled higher frequency operation, reduced harmonic distortion, improved thermal management, and smaller overall system size."

"Our objective was to design the simplest totem-pole PFC topology using our latest generation of 900V SiC MOSFETs, combined with low cost silicon diodes, that could achieve 80+ Titanium system efficiency levels," said Guy Moxey, Wolfspeed's senior director of power products.

"Moreover, we set the additional requirements that the design would use only established and proven commercially-available wide bandgap devices in full production, be the most practical circuit to implement and commercialize, as well as be smaller in volume than existing silicon-based systems at the lower 80+ Platinum efficiency level. And finally, the overall system bill-of-materials (BOM) cost had to be comparable or less than silicon."

The resulting reference design was presented in a webinar entitled 'Achieving High Efficiency Power Supplies (80+Titanium) Without Increasing Complexity or Cost' presented by Wolfspeed engineers Adam Barkley and Edgar Ayerbe.

The overall power consumption for datacentres is estimated to be more than 70 billion kWh annually in the US. High-efficiency power supply designs like those employing Wolfspeed's SiC MOSFETs are vital for datacentre designers as they strive to meet demanding efficiency standards without increasing costs.

According to a 2016 US Department of Energy supported study1 on US datacentre energy usage, efficiency improvements in datacentre power systems have contributed to an estimated 620 billion kWh in energy savings from 2010 to 2020.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: