In a just-published paper in the magazine Science, IBM ( IBM) researchers demonstrated a radio-frequency graphene transistor with the highest cut-off frequency achieved so far for any graphene device - 100 billion cycles/second (100 GigaHertz).
The president and chief executive officer of JDSU has asserted that its innovative technology - which includes using compound semiconductors for PV devices - has helped to bolster its financial standing.
Cree, Inc. (Nasdaq: CREE), a market leader in LED lighting, announces that the city of Valdez has joined the Cree LED City® initiative, an international program that promotes the deployment of energy-efficient LED lighting. Valdez is in the process of converting all 343 street lights to LED technology.
IQE plc, the leading global supplier of advanced semiconductor wafer products and wafer services to the semiconductor industry, is pleased to announce that its UK based wafer operation, Wafer Technology Ltd., is to extend its gallium antimonide (GaSb) product range to include 4” diameter wafers.
Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is slated to receive $2.8 million from the U.S. Department of Defense (DOD) for the continued development of low defect density GaN materials for high performance electronic device applications.
Oxford Instruments is delighted to announce that sales of its systems for the production of HB LEDs continue to grow considerably, with the company receiving multiple orders from a number of important manufacturers based in Asia.
AIXTRON AG announced today that in the third quarter of 2009 Formosa Epitaxy Inc. ‘FOREPI’, based in Lung-Tan, Taoyuan, Taiwan, placed an order for multiple MOCVD reactors which will be used for the production of ultra-high brightness (UHB) InGaN-based blue LEDs