News Article
EPC expands eGaN power transistor family
The EPC8010 100 V gallium nitride FET is optimised for high frequency applications with positive gain into the 3 GHz range
Efficient Power Conversion Corporation (EPC), an innovator of enhancement-mode GaN-on-silicon (eGaN) power FETs, has extended its family of high-speed, high performance transistors.
The EPC8010 power transistor sold in die form measures just 1.75 mm2 with 100 VDS.
EPC8010 - Enhancement Mode Power Transistor
Optimised for high speed switching, the EPC8010 has a maximum RDSON of 160 milliohms and input gate charge in the hundreds of pico-coulombs.
This device has switching transition speeds in the sub nano-second range, making it uniquely capable of hard-switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, this product exhibits very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.
Applications benefiting from the low power, compact, high frequency EPC8010 include hard-switching power converters operating in the multi-megahertz range for envelope tracking, RF power amplifiers, and highly resonant wireless power transfer systems for wireless charging of mobile devices.
“The EPC8010 is an excellent addition to our family of ultra high-speed eGaN FETs. It takes EPC and GaN transistor technology to a level of performance that enables applications beyond the capability of the aging MOSFET. These eGaN FETs can be used in both power switching and RF applications,” notes Alex Lidow, co-founder and CEO of EPC.
Additionally, an EPC9030 development board featuring two EPC8010 devices in a half-bridge configuration with minimum switching frequency of 500 kHz is available now. The purpose of this development board is to simplify the evaluation process of the EPC8010, providing a single board that can be easily connected into any existing converter.
Evaluation units of the EPC8010 are immediately available in 2- and 10-piece packs starting at $40 through Digi-Key Corporation.
The EPC9030 development board is available now for $150, also through Digi-Key Corporation.
The EPC8010 power transistor sold in die form measures just 1.75 mm2 with 100 VDS.
EPC8010 - Enhancement Mode Power Transistor
Optimised for high speed switching, the EPC8010 has a maximum RDSON of 160 milliohms and input gate charge in the hundreds of pico-coulombs.
This device has switching transition speeds in the sub nano-second range, making it uniquely capable of hard-switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, this product exhibits very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.
Applications benefiting from the low power, compact, high frequency EPC8010 include hard-switching power converters operating in the multi-megahertz range for envelope tracking, RF power amplifiers, and highly resonant wireless power transfer systems for wireless charging of mobile devices.
“The EPC8010 is an excellent addition to our family of ultra high-speed eGaN FETs. It takes EPC and GaN transistor technology to a level of performance that enables applications beyond the capability of the aging MOSFET. These eGaN FETs can be used in both power switching and RF applications,” notes Alex Lidow, co-founder and CEO of EPC.
Additionally, an EPC9030 development board featuring two EPC8010 devices in a half-bridge configuration with minimum switching frequency of 500 kHz is available now. The purpose of this development board is to simplify the evaluation process of the EPC8010, providing a single board that can be easily connected into any existing converter.
Evaluation units of the EPC8010 are immediately available in 2- and 10-piece packs starting at $40 through Digi-Key Corporation.
The EPC9030 development board is available now for $150, also through Digi-Key Corporation.
