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Raytheon Drives GaN Power

The company's latest developments in gallium nitride power devices improve performance for defence systems
Raytheon, under the DARPA Microsystems Technology Office (MTO) Wide Bandgap Semiconductor Program, has matured GaN from basic material to transistors.



These include Monolithic Microwave Integrated Circuits (MMICs), Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs), enabling game changing system performance for the DoD.



This is the latest milestone for Raytheon's GaN technology which was honoured by the Office of the Secretary of Defence in June for successful completion of a Defence Production Act Title III Gallium Nitride production improvement program, culminating over a decade of Government and Raytheon investment in GaN RF circuit technology.



GaN technology significantly extends the warfighter's capability providing radar, electronic warfare, navigation, and communication systems with more affordable solutions and increased capability.



"Raytheon continues to be a driving force in the evolution of GaN technology and it is exciting to be part of this new frontier that directly translates to the warfighter," says Joe Biondi, vice president of Advanced Technology for Raytheon's Integrated Defense Systems business. "Through our partnership with DARPA we continue to explore new ways to leverage GaN's limitless capabilities to increase performance and reliability of defense systems."



Raytheon, as part of the DARPA MTO Wide Bandgap Semiconductor Program, with the support of a Navy, Air Force and Army technology team, has achieved several of its first milestones. These include:





Demonstrated record setting X-band GaN Power Amplifier MMIC Performance. The higher efficiency and power of these MMICs enables more affordable systems with higher capability



Completed first ever X-band GaN T/R module demonstrations. This involved extensive, successful design verification testing over a range of relevant operating conditions demonstrating the maturity of the GaN technology




Completed first ever X-band GaN TRIMM demonstration which proved GaN in a relevant environment. This involved extensive testing in a relevant array environment including a 1,000 hour operating test in a laboratory pilot array and an insertion validation in a production radar, proving the TRIMM is ready for transition to production









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