Cree researchers squeeze more than 1000 lm from a single-die LED; Finisar predicts drop-off in VCSEL business amidst "turbulence"; Bookham qualifies submarine laser production; and TDI enters production with 4-inch GaN and AlN epiwafers.
Armed with $0.3 million from the National Science Foundation, researchers at Amberwave Systems and the Rochester Institute of Technology embark on a three-year project to develop III-V resonant tunneling diodes on a silicon wafer platform.
Syntune picks up $7.1 million from investors; Emcore plans to fold three design centers into its main sites; Bookham makes 100,000 InP Mach-Zehnder modulators; and Sanyo starts up a new Aixtron reactor.
The Philips-owned optoelectronics firm previously known as Ulm Photonics ships its 10 millionth VCSEL; Anadigics' senior managers ring the Nasdaq bell; and MBE equipment specialist Riber has a quiet opening half to 2007, with not a single machine shipped.
Coinciding neatly with conference season, Technology and Devices International is attaining more firsts with its HVPE grown InGaN - the first top-quality LEDs from the material made using the faster deposition technique, in this case.
Aixtron sells tool for first plastic electronics plant; Cree plans to triple white XLamp capacity; Intense will develop laser diodes for the European Space Agency; Raytheon gains top “trusted” defense status in US; XenICs brings out a multiplexed IR detector.
Building on their previous development of a hybrid InP/silicon laser structure, researchers from Intel and the University of California, Santa Barbara, demonstrate a similar device with pulse characteristics suitable for ultrafast optical communications.