Toshiba unleashes low power GaN-on-Si white LEDs
The two sets of gallium nitride-on-silicon LEDs are anticipated to commence mass production in August 2013
Toshiba Corporation has launched a series of white LEDs fabricated with a GaN-on-silicon (GaN-on-Si) process.
Toshiba's Sub-Watt Type White LEDs, TL2FK Series (left) and TL3GA Series (right)
The LEDs are low power sub-watt type, due to reduction of forward voltage (VF). Two package line-ups, the TL2FK series with 3.0 x 1.4mm package and the TL3GA series with 3.0 x 3.0mm package, will be made available. Mass production is scheduled to start from August, 2013.
The LEDs can be used in light sources for general lighting, including straight tube lights, light bulbs, base lights and ceiling lights.