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Tuesday 7th April 2009
90 GHz cut-off frequency HEMTs manufactured on Nitronex epiwafers measure up against transistors produced on sapphire and SiC substrates.
Monday 6th April 2009
False compound semiconductor device reliability claims are at the center of one of the largest US defense fraud settlements ever.
Friday 3rd April 2009
Friday 3rd April 2009
Respondent number in the industry-wide ITC doping patent case rises to 50, but the emeritus professor has already granted 21 licenses.
Thursday 2nd April 2009
Single-crystal GaN substrates larger than 2-inch diameter and a method for etching photonic lattices are amongst the subjects of Samsung Electro-Mechanics' latest intellectual property.
Tuesday 31st March 2009
In the wake of CEO Phil Yin's resignation, analysts suggest that the Californian substrate vendor is an attractive proposition.
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Tuesday 31st March 2009
High-temperature manufacturing expertise makes wide-bandgap wafers a good fit for the Japanese firm's semiconductor material business.
Tuesday 31st March 2009
Triangular lattices etched directly into thin GaN LEDs come close to matching encapsulants for light extraction, while avoiding their disadvantages.
Tuesday 31st March 2009
Market forecast suggests a 23 percent decline this year in sales of high-power diodes used to pump industrial laser systems, with fiber lasers the only bright spot.
Monday 30th March 2009
A University of Illinois team featuring the inventor of the first visible LED has brought a light-emitting HBT nearer to practical application.
Friday 27th March 2009
Aixtron sees reactors for higher volume manufacturing needing more efficient precursor supply.
Thursday 26th March 2009
Buoyant 2008 and strong orders from researchers fill the French MBE equipment supplier with confidence for the future.
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Wednesday 25th March 2009
PA maker's recent market share gains and improvement in profit margins may not continue, according to a stock research report.
Tuesday 24th March 2009
Epiwafer foundry’s stock market valuation surges as it raises hopes for a strong finish to 2009.
Tuesday 24th March 2009
The piezoelectric response of a GaN film to terahertz radiation can give simpler measurements of film thickness, according to results from Lawrence Livermore National Laboratory.
Tuesday 24th March 2009
Inexpensive sapphire substrates etched with stripes allow the Japanese chipmaker to produce what it says are the highest output power hetero-epitaxial non-polar GaN LEDs.
Monday 23rd March 2009
RF chipmaker reformats its MESFET cable TV infrastructure products to address previously resistant customers, first at 870 MHz and later at 1 GHz
Friday 20th March 2009
Photonic integration worked out really well for Infinera; can a start-up targeting optical access pull off the same feat for a fraction of the cost?
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Friday 20th March 2009
Solar energy system developer embarks on two-year project to make customized cells based on inverted metamorphic (IMM) structures.
Thursday 19th March 2009
Copper-substrate LED chips are still in use in the Z-Power LED P9 Series, says a teardown report by MuAnalysis.
Wednesday 18th March 2009
NanoGaN is mulling further expansion as it waits for key results from the assessment of its substrates for use in optoelectronic devices.
Tuesday 17th March 2009
Hokkaido University and Honda use patterned silica films as a template to deposit 12.3 percent conversion efficiency nanowires.
Tuesday 17th March 2009
530 nm frequency-doubled semiconductor laser production is being readied for ramp-up, albeit too slowly for one industry player, while research on individual diodes reaches new heights.
Monday 16th March 2009
Parallel connection technique helps shrink power losses and module size from both commercial silicon-based inverters and previous prototypes.

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