News Article
Vishay launches 850 nm IR GaAs based IR emitter
The gallium arsenide device features radiant intensity to 350 mW/sr at 1 A, optical power to 660 mW, and thermal resistivity down to 10 K/W
Vishay Intertechnology has broadened its optoelectronics portfolio with the release of a new 850 nm infrared (IR) emitter in a compact 3.85 mm by 3.85 mm by 2.24 mm top-view SMD package.
Based on SurfLight surface emitter chip technology and featuring an integrated lens, the VSMY98545 offers high drive current capability, high radiant intensity, and high optical power while providing low thermal resistivity.
The VSMY98545 features a 42 mm by 42 mm emitter chip, which supports a low thermal resistance of 10 K/W junction-to-pin, and enables high drive currents up to 1 A and pulses up to 5 A.
The emitter's integrated lens supports a +/- 45° angle of half intensity, resulting in ultra-high radiant intensity of 350 mW/sr at 1 A and 1600 mW/sr at 5 A (pulses). This is more than double the radiant intensity of devices without lenses.
With its extremely high drive current capabilities and optical power to 660 mW at 1 A, the VSMY98545 can replace multiple standard SMD devices, allowing designers to reduce the component count and improve performance in a wide variety of applications. The emitter is optimized for IR illumination in CCTV, gaming, and road cash systems, in addition to long-range proximity applications such as presence detection for wake-up functions in office equipment.
The device released today offers fast switching speeds down to 15 ns, low forward voltages down to 1.8 V at 1 A, and operating temperatures from -40 °C to +95 °C. The VSMY98545 ensures a shelf life of 168 hours and provides a moisture sensitivity level (MSL) of 3 in accordance with J-STD-020. Supporting lead -free reflow soldering, the device is RoHS-compliant, halogen-free, and Vishay Green.
Samples and production quantities of the new VSMY98545 are available now, with lead times of eight to ten weeks for larger orders.
Based on SurfLight surface emitter chip technology and featuring an integrated lens, the VSMY98545 offers high drive current capability, high radiant intensity, and high optical power while providing low thermal resistivity.
The VSMY98545 features a 42 mm by 42 mm emitter chip, which supports a low thermal resistance of 10 K/W junction-to-pin, and enables high drive currents up to 1 A and pulses up to 5 A.
The emitter's integrated lens supports a +/- 45° angle of half intensity, resulting in ultra-high radiant intensity of 350 mW/sr at 1 A and 1600 mW/sr at 5 A (pulses). This is more than double the radiant intensity of devices without lenses.
With its extremely high drive current capabilities and optical power to 660 mW at 1 A, the VSMY98545 can replace multiple standard SMD devices, allowing designers to reduce the component count and improve performance in a wide variety of applications. The emitter is optimized for IR illumination in CCTV, gaming, and road cash systems, in addition to long-range proximity applications such as presence detection for wake-up functions in office equipment.
The device released today offers fast switching speeds down to 15 ns, low forward voltages down to 1.8 V at 1 A, and operating temperatures from -40 °C to +95 °C. The VSMY98545 ensures a shelf life of 168 hours and provides a moisture sensitivity level (MSL) of 3 in accordance with J-STD-020. Supporting lead -free reflow soldering, the device is RoHS-compliant, halogen-free, and Vishay Green.
Samples and production quantities of the new VSMY98545 are available now, with lead times of eight to ten weeks for larger orders.
