Infineon Technologies has signed an agreement with Taiwanese epiwafer and device manufacturer United Epitaxy Company (UEC) to set up a joint venture that will manufacture and develop optoelectronic chips for use in the fiber-optics market.
On November 13-14, the US Department of Energy’s Office of Energy Efficiency and Renewable Energy (Building Technologies Program) will host a two-day workshop in Washington, DC on solid-state lighting.
II-VI Incorporated and Sensor Electronic Technology, Inc. (SET) have joined efforts in a push for development of AlInGaN/GaN HFET epitaxial wafer technology for ultra-high power next generation radars, wireless and satellite communications systems.
New Wave Research, a manufacturer of laser-based systems for microelectronics and analytical applications based in Fremont, CA, has been awarded United States patent number 6,580,054 for its method of scribing sapphire substrates.
In the first sign of consolidation among Japanese manufacturers of optical components, NTT Electronics Corp and Oki Electric Industry Co., Ltd. have formed an alliance to combine their optical communication device businesses.
SemiSouth Laboratories, a developer of SiC transistors, diodes and epiwafer products, has received a $2.67 million contract to develop key fabrication processes for SiC RF transistors which can be used in new, high-power, radar systems.