News Article
Transphorm unveils first JEDEC qualified 600V GaN HEMT
The 600V gallium nitride-on-silicon carbide device employs the firm's EZ-GaN technology
Transphorm has gained JEDEC qualification of its TPH2006PS, GaN HEMT (High Electron Mobility Transistor) grown on a SiC substrate.
The firm says this is the industry’s first qualified 600V HEMT device.
The TPH2006PS, based on its patented, EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50 percent compared to conventional silicon-based power conversion designs, today. The TO-220-packaged device features RDS(on) of 150 mΩ, Qrr of 42 nC and high frequency switching capability that enables compact, lower cost systems.
“Our team has accomplished the first qualification of a 600 V GaN Transistor product, allowing our customer-partners to now introduce energy saving products, Powered-by-Transphorm”, says Primit Parikh, President of Transphorm. “This development also lays to rest any doubts that high voltage GaN transistors can indeed be successfully qualified”.
Transphorm’s efficient, compact, and easy-to-use solutions simplify the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles.
For customers looking for a low-risk roadmap to the next generation of power conversion technology, Transphorm says its proprietary EZ-GaN provides a cost-effective, customisable and easy-to-use solution ready for commercial scale.
The firm says this is the industry’s first qualified 600V HEMT device.
The TPH2006PS, based on its patented, EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50 percent compared to conventional silicon-based power conversion designs, today. The TO-220-packaged device features RDS(on) of 150 mΩ, Qrr of 42 nC and high frequency switching capability that enables compact, lower cost systems.
“Our team has accomplished the first qualification of a 600 V GaN Transistor product, allowing our customer-partners to now introduce energy saving products, Powered-by-Transphorm”, says Primit Parikh, President of Transphorm. “This development also lays to rest any doubts that high voltage GaN transistors can indeed be successfully qualified”.
Transphorm’s efficient, compact, and easy-to-use solutions simplify the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles.
For customers looking for a low-risk roadmap to the next generation of power conversion technology, Transphorm says its proprietary EZ-GaN provides a cost-effective, customisable and easy-to-use solution ready for commercial scale.
