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Weekly Newsletter
15th March 2022
CS is the most respected, authoritative, and widely read magazine that has been connecting the Compound Semiconductor Community since 1995.
Top News
Slashing killer defects in gallium oxide

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Top News
Soitec to expand manufacturing footprint

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This article was originally featured in Volume 28
Issue 2 of Compound Semiconductor Magazine.
MAGAZINE FEATURE
 
Optimising gallium oxide growth
How do you produce great gallium oxide power devices? It’s a combination of excellent reactor design, ideal precursors and dopants, a partner material for forming heterostructures, and good dielectrics and contacts.BY Fikadu Alema, Aaron Fine and Andrei Osinsky FROM AGNITRON, Arkka Bhattacharyya FROM The University of Utah AND Sriram Krishnamoorthy FROM UCSB

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Nel Hydrogen Interview

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P-n junction empowers GaN HEMTs

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NEWSLETTER SPONSOR: CS International



CONNECTING THE CS INDUSTRY

Back in Brussels on 28th - 29th June 2022, CS International, will return for its eleventh year face-to-face!

With a pedigree stretching back more than a decade, CS International has firmly established itself as the leading conference covering all aspects of compound semiconductor device manufacturing.

At the next meeting, to be held in June 2022, presentations will cover five of the most important topics of our time: how to build faster, more frugal networks; what’s needed to drive the deployment of the microLED; how we will build a multi-billion dollar SiC industry; the opportunities for VCSELs and their surface-emitting cousins; and what are the best ways to exploit the glorious potential of GaN.

Throughout these five sessions, experts from our community will detail breakthroughs in device technology; offer insights into the current status and the evolution of compound semiconductor devices; deliver an up-to-date overview of the status of the CS industry; and provide details of advances in tools and processes that will help to drive up fab yields and throughputs.

Visit the website or info@csinternational.net for more details.



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ADDITIONAL NEWS

6,400V GaN diode can protect the grid from EMPs
New Sandia diode can shunt excess electricity in a few billionths of a second

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Scientists find solutions to perovskite hurdle
Solar cells retain 87 percent of original sunlight-to-electricity conversion performance for more than 2,000 hours

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Toyoda Gosei makes GaN Substrates over 6 inches
Project with Osaka University increases diameter of GaN substrates to over 6 inches

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ClassOne Signs ZMC as Distribution Partner
Partnership set to expedite sales, service, and support of company’s wet processing tools in Singapore, Malaysia, Vietnam, Phili...

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EPIR orders Riber MBE machine
US maker of infrared semiconductors orders MBE 32 MCT system to make high quality HgCdTe material

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EPC Releases Lowest On-Resistance Rad Hard GaN FET
40V 1.5 mΩ GaN FET has a total radiation dose rating greater than 1 Mrad

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Transphorm and TDK-Lambda expand GaN Module Family
12V and 48V 500 W PSUs mark second and third products in TDK’s PFH Series

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Vector Photonics celebrates its second birthday
Vector Photonics is celebrating its second birthday, as the company continues to commercialise its revolutionary, all-semiconducto...

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CS ISSUE 2
Volume 28
Compound Semiconductor Magazine
Featuring: Optimising gallium oxide growth; Enhancing energy storage with thermophotovoltaics; Audiophile amplification gains from GaN; Novel VCSELs speed optical networks Plus more...
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