EPC Releases Lowest On-Resistance Rad Hard GaN FET
40V 1.5 mΩ GaN FET has a total radiation dose rating greater than 1 Mrad
Efficient Power Conversion (EPC) has expanded its family of radiation-hardened GaN products for power conversion solutions in critical spaceborne and other high reliability environments. The latest device is claimed to have the lowest on-resistance of any rad-hard transistor currently available on the market.
The EPC7019 radiation-hardened eGaN FET is a 40V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
The device has a figure of merit (RDS(on) x QG) that is 20 times superior to alternative rad hard silicon solutions and the size is 20 times smaller. With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Finally, GaN devices support higher total radiation level and SEE LET levels than silicon solutions.
Applications benefiting from the performance and fast deployment of the EPC7019 include power supplies for satellites and mission equipment and motor drives for robotics and instrumentation.
“EPC's GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before” said Alex Lidow, CEO, and co-founder of EPC. “The EPC7019 offers designers a solution with a figure of merit that is 20 times better than best-in-class silicon rad hard devices. This is the lowest on-resistance for a rad hard transistor on the market today. And, the EPC7019 is significantly smaller and lower cost”.
The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.
Join us face-to-face between 28th – 29th June 2022
- View the agenda.
- 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and SSI International.
- Email info@csinternational.net or call +44 (0)24 7671 8970 for more details.
*90% of exhibition space has gone - book your booth before it’s too late!
