Navitas unveils 2300V full-bridge SiC module family
Navitas Semiconductor has announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure.
The new G4H08MT23GB4 2300 V full-bridge module family (built using Navitas' fourth-generation GeneSiC Trench-Assisted Planar architecture), uses the industry-standard SiCPAK form factor and has a class-leading RDSON (8 mΩ).
Navitas says its UHV SiC modules provide the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks. This places the new module family at the centre of Navitas' AI infrastructure portfolio. spanning AI data center and energy and grid infrastructure alongside battery energy storage, solar, EV megawatt charging, hydrogen fuel cell electrolysis and DC-DC conversion, and industrial motor-drive and high-voltage power supply applications.
The modules also integrate several construction enhancements that better meet the needs of demanding, high-power applications. For example, its aluminum nitride (AlN) active-metal-braze (AMB) substrate enables superior heat spreading and supports an isolation capability of over 5 kV. Its epoxy-resin potting technology reduces internal stress distribution, limits moisture and contaminant ingress, and delivers 10x improvements in thermal conductivity versus silicone gel.
Additionally, the module’s high-current, press-fit pins have twice the current-carrying capability per pin versus standard press-fit connections. An optional pre-applied thermal interface material (TIM), which simplifies and standardizes heatsink assembly, is also available.
The new module family will be qualified to Navitas' AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements.
“Our fourth-generation GeneSiC Trench-Assisted Planar architecture continues to push the limits of what's possible in ultra-high voltage SiC,” said Paul Wheeler, VP & GM of Navitas' SiC Business Unit. “This new 2300 V module delivers a leading RDS(ON) of any device using the SiCPAK form factor, giving system designers a proven, reliability-tested building block for the solid-state transformers and energy storage systems that are reshaping grid and AI data centre infrastructure.”
Samples of the G4H08MT23GB4(HC) family are available immediately.
