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Thursday 1st March 2018
SERENA project to develop GaN-on silicon prototype for beamforming in mm-wave multi-antenna arrays
Thursday 1st March 2018

HELCATS project will develop semiconductor lasers to enable miniaturised atomic clocks using Strontium ions

Thursday 1st March 2018
Navitas announces mobile adapter design with five times greater power and twice the power density of standard chargers
Thursday 1st March 2018
High-frequency and very high-power device packages are designed to meet the needs of 5G, IoT and advanced cellular technologies
Thursday 1st March 2018
Company is working with a leading tooling provider to supply several of its international manufacturing sites
Thursday 1st March 2018
IQE selected as winner from entrants across the UK
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Thursday 1st March 2018
Acquisition price represents a total equity value of about $8.35 billion
Wednesday 28th February 2018

Scientists demonstrate photoluminescence with a laser excitation wavelength of 473 nm and 632.8 nm

Wednesday 28th February 2018
Revenues rose by 17 percent year-on-year to €230.4m with a net profit of €6.5m
Wednesday 28th February 2018
MoS2-based 'memtransistor' can process information and store memory with one device
Wednesday 28th February 2018
Growing nanocrystals of GaAs on tiny columns of silicon and germanium could lead to new types of sensors, LEDs, and solar cells
Wednesday 28th February 2018

120A, 650V GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems

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Wednesday 28th February 2018
Mercury team brings over 25 years of experience in specialty semiconductor processing
Tuesday 27th February 2018

Fourth generation Luxeon CoB Core range leads the industry in 90CRI with a 12 percent increase over previous generation

Tuesday 27th February 2018
New SiC MOSFETs and Schottky barrier diodes target industrial and automotive markets
Tuesday 27th February 2018
New evaluation system combines 100V E-Mode GaN transistor and high-speed driver to provide sub nano-second switching
Monday 26th February 2018
Global device market to be worth $1890.2 million by 2023
Monday 26th February 2018
Company to show devices for 26 GHz, 28 GHz and 39 GHz systems
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Monday 26th February 2018
Pilot line for laser-thinning advanced SiC, GaN, and sapphire wafers already processing customer substrates
Monday 26th February 2018
Siltectra validates new process by producing a GaN on SiC HEMT device on a split-off (or twinned) wafer at its new facility in Dresden
Monday 26th February 2018

GaN-on-Si MMICs deliver wideband performance and superior efficiency

Friday 23rd February 2018

Low-loss and high-speed switching accelerates the miniaturisation of equipment, and expands the GaN power transistor market

Friday 23rd February 2018
Second generation 1kW X-band pulse SSPA designed to reduce power consumption and operating costs

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