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Friday 26th October 2012
Companies need innovative tools to differentiate from their cheaper Chinese rivals. Cadmium telluride, CIGS and silicon cell manufacturers currently have an overcapacity of 82 percent
Friday 26th October 2012
The Oslon LX LED can be used to provide affordable LED solutions for the high end to subcompact automobile market
Thursday 25th October 2012
Indium arsenide QDs offer a better alternative to gallium arsenide and may allow quantum researchers to manipulate a large number of qubits, enough for a practical machine
Thursday 25th October 2012
The firm will combine diamond substrates with its gallium nitride-on-silicon carbide power technology to improve power density and power handling
Thursday 25th October 2012
The 1kV/ 30A IV pulse tool provides high voltage signals and short pulse / fast switching capabilities in gallium nitride and silicon carbide devices simultaneously
Thursday 25th October 2012
The firm is introducing four gallium nitride based power transistors and four gallium arsenide based pHEMT power amplifiers. They are suited to applications such as emergency responder radios, electronic warfare, radar solutions and test equipment
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Wednesday 24th October 2012
The firm's four new III-nitride CXA LED arrays deliver high performance and are easy to use
Wednesday 24th October 2012
Apart from arsenide and phosphide optoelectronic device development, the Japanese firm will improve its antimonide-based magnetic sensors
Wednesday 24th October 2012
Power Integrations says it will incur a third-quarter charge due to the expected closure of SemiSouth Laboratories, a developer of silicon-carbide power devices
Wednesday 24th October 2012
The company has made €51.5m inventory write-downs due to dwindling MOCVD demand
Tuesday 23rd October 2012
The firm has reported yearly and quarterly results
Tuesday 23rd October 2012
China’s LED chip manufacturer has purchased several reactors from Veeco to mass produce gallium nitride based products
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Tuesday 23rd October 2012
Third quarter LED & Solar revenues were $94 million: approximately $79 million in MOCVD and $15 million in MBE. Data Storage revenues were $33 million
Tuesday 23rd October 2012
Jacques Kielwasser's position is not expected to be filled at the moment
Tuesday 23rd October 2012
CS International are pleased to announce Yifeng Wu, Vice President Product Development- Transphorm has been confirmed as a guest speaker for the Compound Semiconductor industry's premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013. His presentation will be on what is the Status of High-Voltage GaN Power Electronics.
Monday 22nd October 2012
The firm's flexible parametric curve tracer solutions analyse silicon carbide and gallium nitride power devices
Monday 22nd October 2012
The supplier of crystalline aluminium nitride and gallium nitride materials has helped NRL to develop a new technology for commercial and defence applications
Monday 22nd October 2012
The new LED lighting is estimated to reduce energy usage by 62 percent compared to metal halide lighting
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Monday 22nd October 2012
The supplier of III-V based optoelectronic products has separated the roles of Chairman of the Board and Chief Executive Officer, consistent with current best governance practices
Monday 22nd October 2012
The LED and power device chip manufacturer's quarterly net income increased 26 percent year-over-year to $16.1 million
Friday 19th October 2012
The 13 MW project is phase one in UAE's planned 1GW Mohammad Bin Rashid Al Maktoum Solar Park
Friday 19th October 2012
The company's high-power III-nitride based X10 modules Chip-on-Board LEDs reduce the manufacturing costs of energy-efficient light sources
Friday 19th October 2012
The advanced O&M capabilities should optimise output, revenue and grid integration for customers of the cadmium telluride panel manufacturer
Friday 19th October 2012
The system will be used for the development of group III-nitride compound semiconductor materials

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