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Wednesday 16th May 2012
The FEM uses the firm's indium gallium phosphide and gallium arsenide technologies
Wednesday 16th May 2012
The indium phosphide chip manufacturer has will employ the Verian system as a requisitioning and approval workflow tool that integrates directly into SAP
Wednesday 16th May 2012
The device features an aluminium gallium arsenide LED and is suited to harsh application environments like motor control, measuring instruments as well as factory automation
Wednesday 16th May 2012
The agreement made by the provider of group III materials used in the MOCVD industry ,consists of a $20 million public bought‐deal offering and a $20 million concurrent private placement
Tuesday 15th May 2012
Eliot Parkinson is taking over from Adrian Meldrm at the firm's Cardiff III-V facility
Tuesday 15th May 2012
The UK-based firm has received an order for a physical vapour deposition which will be used for compound semiconductor growth. These will include gallium arsenide and aluminium nitride RF devices
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Tuesday 15th May 2012
Peter Bauer is resigning as CEO of new gallium nitride-on-silicon developer Infineon Technologies AG effective September 30, 2012 due to health reasons
Tuesday 15th May 2012
A new report says silicon manufacturer Broadcom and compound semiconductor supplier TriQuint are good examples that illustrate that the semiconductor industry is bouncing back
Tuesday 15th May 2012
The fast switching, high current handling and superior thermal properties of silicon carbide devices are ideal for solar inverters, SMPS, PFC circuits, induction heating, UPS and motor drives
Monday 14th May 2012
The addition of the 3020 series will provide a smaller footprint with higher light density
Monday 14th May 2012
One of the concepts currently in development is an unmanned aerial vehicle which stores electric power to enhance its potential for long endurance, quiet operations and low emissions
Monday 14th May 2012
The aluminium gallium nitride UV LED innovator has been awarded for its role in research and development for the U.S. government under the SBIR program
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Saturday 12th May 2012
The company's new III-V based laser bar family offers 200 W continuous power and an efficiency of up to 65 percent
Friday 11th May 2012
Sharp's new nitride LED modules from the new "Mini Zenigata" series offer an efficiency of up to 99 lm/W, a luminous flux of up to a typical 1550 lm and are available with a CRI value of up to 82
Friday 11th May 2012
The two firms aim to further accelerate development of the gallium nitride-on-silicon process for LED chips
Friday 11th May 2012
The new facility will focus on customer service & training for the semiconductor manufacturing industry
Friday 11th May 2012
The German-based firm has opened a lamps and luminaires sales office in Varese, Italy, by signing a distribution agreement with the company LEDisOne
Friday 11th May 2012
Indium phosphide innovator CyOptics will use Verian to requisition and approve a workflow tool that integrates directly into Systems Applications and Products in Data Processing (SAP)
Info
Friday 11th May 2012
The product lines include VCSEL and photodiode components, parallel optical transceiver modules, and active optical cables
Friday 11th May 2012
Latest developments in gallium nitride will be used in wireless applications, traffic lights and electric cars
Thursday 10th May 2012
The firm is ordering more reactors to cope with growing demands for silicon carbide based products for the power electronics industry
Thursday 10th May 2012
Millitech's gallium nitride power amplifiers offer wideband power covering 75 GHz to 102 GHz
Tuesday 8th May 2012
The restructuring also includes the retirement from the Board of Joel A. Elftmann, after 18 years of service, whose term had expired
Tuesday 8th May 2012
The University of Warsaw will use the reactor to pursue gallium nitride research

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