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Wednesday 20th June 2012
The firm has developed a family of singlechip multiple-input receiver MMICs and transmitter MMICs (or transceivers), which incorporate gallium arsenide 3-D MMIC chip technology
Wednesday 20th June 2012
The improved gain of the new gallium arsenide devices will help microwave designers reduce the number of parts in their overall system
Wednesday 20th June 2012
The firm's CIGS technology is being used to harness sunlight into charging the latest smartphones. Ascent will debut its chargers in Asia in early August
Tuesday 19th June 2012
The MMDS25254H 2300-2700 MHz device employs a gallium arsenide MMIC and indium gallium phosphide HBT technology
Tuesday 19th June 2012
Sandia's latest development shows that indium gallium nitride may increase the conversion percentage of the sun’s frequencies and permits flexible energy absorption
Tuesday 19th June 2012
In the long term, LEDs for lighting should overtake the CFL lamp market despite the fact that CFLs are currently the most economical choice
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Tuesday 19th June 2012
Employing the firm's advanced indium gallium phosphide HBT MMIC technology, these modules are suited to for use in the world’s most widely used 3G/4G frequency bands
Tuesday 19th June 2012
The LED substrate is created by applying semiconductor lithography to silicon wafers. It allows for fine pitch interconnection between gallium nitride LED chips and provides a pitch spacing of 50 µm, six times less than other currently available boards
Tuesday 19th June 2012
At 1W power output, these TriQuint products are ideal for use in Very Small Aperture Terminals (VSATs) and point-to-point as well as point-to-multipoint microwave applications
Tuesday 19th June 2012
The firm has hit its development milestones ahead of schedule and secured more financing to accelerate the commercialisation of its gallium nitride power transistors
Tuesday 19th June 2012
The cash from the U.S. Department of Energy, will be used to accelerate the manufacturing of the firm's gallium indium phosphide / gallium arsenide / germanium solar cells
Monday 18th June 2012
New tungten crucibles made by Plansee make it simpler and cheaper to grow sapphire ingots used in the production of LEDs
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Monday 18th June 2012
Two new stages from Aerotech are ideal for use in mapping applications used to determine photoluminescence, thickness and reflectance uniformity in materials such as PINs, lasers and VCSELs
Monday 18th June 2012
The new gallium nitride solutions are claimed to increase RF performance and enable smaller circuits, as well as better-performing low voltage and high power systems
Monday 18th June 2012
Designed for both "chip on board" and "system-in-package" (SiP) implementations, both product families employ the firm's gallium arsenide pHEMT and gallium indium phosphide HBT technology and operate over a wide range of operating voltages. The highly integrated FEMs significantly reduce external component count outside the core WiFi chipset
Monday 18th June 2012
The package, based on gallium arsenide technology, provides a smaller footprint than is typically available for a digital phase shifter with an internal driver
Monday 18th June 2012
The gallium nitride matched power device extends range, reduce size and weight, and improves overall ruggedness in new and existing radar designs
Monday 18th June 2012
With the aid of this modular plant, innovative large-scale manufacturing processes for CIGSSe solar cells will be developed
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Friday 15th June 2012
The indium phosphide PIC innovator's "Network EQ" promises to lower total cost of ownership
Friday 15th June 2012
The enhanced PDKs are immediately available to current and prospective RFMD Foundry Services customers for the firm's gallium nitride and gallium arsenide process technologies
Friday 15th June 2012
The internal stresses generated when the gallium nitride crystals originally formed on the silicon substrate are reduced when the epilayers are transferred to a copper substrate
Friday 15th June 2012
Exposing plasma-damaged GaN to high doses of H radicals, restores the photoluminescence to almost the level of unetched GaN
Friday 15th June 2012
The provider of custom structures grown on gallium arsenide, indium phosphide, gallium antimonide and indium arsenide substrates will use the financing to develop the high-tech infrastructure in the field of compound semiconductor technology
Friday 15th June 2012
The collaboration, which includes partners from industry, universities, and government will help to set the direction for this promising renewable energy technology

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