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Friday 15th June 2012
The high power gallium nitride-on-silicon RF MMIC processes allow telecom system operators and military system providers to leverage efficiency for operational cost savings
Friday 15th June 2012
The device, suited for next-generation smartphones and tablets, enables greater range and performance for video streaming. It employs the firm's E/D pHEMT technology which incorporates an indium gallium arsenide active layer
Friday 15th June 2012
The fully owned subsidiary of the Helmholtz Centre Berlin for Materials and Energy (HZB) for photovoltaics has commenced full operation of small solar modules based on copper indium gallium diselenide
Thursday 14th June 2012
The supplier of plasma process tools, for research into and production of a number of key compound semiconductor applications has also seen improvements in sales and in its order book
Thursday 14th June 2012
The firm's gallium indium phosphide / gallium arsenide / germanium solar cells will supply electricity to Enel, Italy’s largest power company
Thursday 14th June 2012
What's more, since the company filed for insolvency last year, an International investment process has begun. Soltecture says there is a high interest among potential buyers
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Thursday 14th June 2012
Luminus says its latest nitride Big Chip LED is the world's brightest
Thursday 14th June 2012
The devices, manufactured using an advanced indium gallium phosphide HBT MMIC technology, offer reliability, temperature stability, and ruggedness
Thursday 14th June 2012
The new projector is targeted towards the pro AV market. In the system, the combination of LED and laser light result in a vibrant and rich display colour
Wednesday 13th June 2012
In this new position, Ploessl will work with Indium's global team of engineering, sales, operations, and R & D professionals to capitalise on the growth of LEDs, metal organic precursors, power storage systems, fibre optics, and next generation OLED displays
Wednesday 13th June 2012
The flexible thin-film solar cell and module CIGS manufacturer, is seeking to make solar the main source of power for world's commercial and industrial buildings, which consume 40% of electricity
Wednesday 13th June 2012
The system incorporates the firm's III-V compound semiconductor multijunction solar technology
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Wednesday 13th June 2012
The firm's newest L-HOT MWIR tool, based on mercury cadmium telluride technology, offers thermal equipment makers power efficiency with no trade-off in detection range
Wednesday 13th June 2012
The system, which has automated wafer loading will be used to scan semiconductor wafer products including gallium arsenide and indium phosphide based materials. The tool has built in intelligence to enable repeatable and quantifiable object recognition to identify, categorise and record wafer features in real-time
Wednesday 13th June 2012
The new copper-moly-copper packages dissipate heat in gallium nitride, gallium arsenide and silicon carbide power devices
Wednesday 13th June 2012
The MMIC gallium nitride-on-silicon carbide process using the new PDK will be demonstrated at a joint workshop. This will take place between 10am and 12pm on June 20th at the 2012 International Microwave Symposium in Montreal
Wednesday 13th June 2012
The firm claims its breakthrough gallium nitride technology platform provides twice the efficiency of conventional gallium arsenide solutions
Wednesday 13th June 2012
The new RFVA0016 amplifier for broadband applications incorporates RFMD's gallium arsenide HBT, indium gallium arsenide HBT and LDMOS technology
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Tuesday 12th June 2012
The first Aixtron CRIUS II-XL Reactor will be used to set up a process for growing gallium nitride-on-silicon LEDs
Tuesday 12th June 2012
The new RFPA1012 gallium arsenide HBT linear power amplifier is specifically designed for wireless infrastructure applications
Tuesday 12th June 2012
Suitable for cellular infrastructure applications, the RF power innovator adds the efficiency, performance and bandwidth advantages of gallium nitride technology to its portfolio
Tuesday 12th June 2012
The silicon germanium BiCMOS process was chosen over traditional gallium arsenide solutions due to its ability to operate in the 12GHz to 15GHz band. What's more, the process allows multiple analogue and digital functions to be integrated into a single chip
Tuesday 12th June 2012
Together, they will advance gallium nitride power devices for the development of high-power-density converters operating at temperatures of up to 300°C
Tuesday 12th June 2012
The company intends to continue developing the POET platform which enables monolithic fabrication of integrated circuit gallium arsenide devices on a single wafer

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