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Monday 25th June 2012
The new model can be used to assess electrical properties of solar cells as well as many III-V based device such as those based on gallium arsenide, indium phosphide and III-nitrides
Monday 25th June 2012
The fully owned subsidiary of the firm will no longer operate the CIGS 35 MWp Berlin, Germany production facility
Thursday 21st June 2012
The provider of sapphire substrates and products to the LED, RFIC, semiconductor, and optical industries has seen a 546 percent five-year revenue growth, with $134 million in revenue in 2011
Thursday 21st June 2012
The gallium nitride HIC is optimised for high gain and high powerand is suited to AESA, and PESA radar applications
Thursday 21st June 2012
The gallium nitride device is suited to applications such as high definition video broadcast and broadband data communication
Thursday 21st June 2012
The platform, which employs the firm's indium phosphide technology, was awarded for its disruptive impact on the optical network industry
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Thursday 21st June 2012
NXP has announced that it will be demonstrating its gallium nitride based products at the IEEE MTT-S International Microwave Symposium in Montreal this week
Thursday 21st June 2012
The BGU8006 low-noise amplifiers, measuring just 0.65 x 0.44 x 0.2mm, have an extremely low noise figure of 0.6 dB and employ the firm's silicon germanium process
Thursday 21st June 2012
The indium phosphide PIC developer is building on its 100Gb/s platform with the new third generation system
Thursday 21st June 2012
New 1200V silicon carbide diodes will enable manufacturers of products such as solar inverters, SMPS, induction heaters, UPS and motor drives to benefit from increased performance and reduced space
Thursday 21st June 2012
By using a {20-21} semi-polar gallium nitride substrate, adjusting crystal growth, wafer processing, and laser production processes, a joint venture has developed a true green laser diode
Wednesday 20th June 2012
The devices expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets and rely on the firm's gallium arsenide pHEMT technology
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Wednesday 20th June 2012
Wang has been working in the semiconductor industry in the US and China for many years and most recently held the position of Regional President of Novellus Systems in China
Wednesday 20th June 2012
The 10 GHz gallium nitride device reduces chip footprint by over 90%, enabling more compact radars and wireless communications equipment
Wednesday 20th June 2012
The new gallium nitride-on silicon amplifier achieves a conversion efficiency rating of 70%
Wednesday 20th June 2012
The firm claims the two devices deliver the lowest noise figure of any integrated, packaged solutions for base station and similar applications
Wednesday 20th June 2012
The firm has developed a family of singlechip multiple-input receiver MMICs and transmitter MMICs (or transceivers), which incorporate gallium arsenide 3-D MMIC chip technology
Wednesday 20th June 2012
The improved gain of the new gallium arsenide devices will help microwave designers reduce the number of parts in their overall system
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Wednesday 20th June 2012
The firm's CIGS technology is being used to harness sunlight into charging the latest smartphones. Ascent will debut its chargers in Asia in early August
Tuesday 19th June 2012
The MMDS25254H 2300-2700 MHz device employs a gallium arsenide MMIC and indium gallium phosphide HBT technology
Tuesday 19th June 2012
Sandia's latest development shows that indium gallium nitride may increase the conversion percentage of the sun’s frequencies and permits flexible energy absorption
Tuesday 19th June 2012
In the long term, LEDs for lighting should overtake the CFL lamp market despite the fact that CFLs are currently the most economical choice
Tuesday 19th June 2012
Employing the firm's advanced indium gallium phosphide HBT MMIC technology, these modules are suited to for use in the world’s most widely used 3G/4G frequency bands
Tuesday 19th June 2012
The LED substrate is created by applying semiconductor lithography to silicon wafers. It allows for fine pitch interconnection between gallium nitride LED chips and provides a pitch spacing of 50 µm, six times less than other currently available boards

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