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Monday 22nd August 2011
High-volume manufacturing CIGS solar module facilities in Oregon and California will increase availability of innovative thin film solar modules and provide more than 700 jobs.
Monday 22nd August 2011
The compact SST11CP15 is a versatile power amplifier based on the firm’s indium gallium phosphide / gallium arsenide HBT technology.
Monday 22nd August 2011
The one day workshop, taking place in Grenoble, France on Tuesday 18th October, will offer a broad insight into research solutions and results and will include discussions on III-V etch for nanowire applications.
Monday 22nd August 2011
The firm wants an export ban against LG LED products out of Korea. The LED giant has also filed nullity suits and infringement actions against LG and Samsung, in particular for what it says is patent infringement on its white light LED technology.
Monday 22nd August 2011
The provider of indium gallium phosphide / gallium arsenide HBTs has an option to increase the amount available to $1 billion and has a five-year term.
Friday 19th August 2011
Street lighting will be the biggest segment, reaching $1.5 billion this year and anticipated to hit $1.8 billion in 2012.
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Friday 19th August 2011
The new module, which incorporates an 850 nm gallium arsenide based VCSEL, is claimed to increase port density and deliver twice the data bandwidth of the current generation of fibre channel devices at nearly the same power level.
Thursday 18th August 2011
The addition of Ruud’s BetaLED product line will strengthen Cree’s position in gallium nitride based LED lighting and components.
Thursday 18th August 2011
The firm is celebrating its gallium arsenide and gallium nitride technology products, which have revolutionised the RF industry
Thursday 18th August 2011
The firm’s products, which include silicon carbide transistors, are suited to solar inverters, hybrid electric vehicles, industrial motors, computing and defence are now available globally through Premier Farnell.
Thursday 18th August 2011
The firm’s ES2-XLG3.0 tool is claimed to boast significant quality innovations that optimise yield and efficiency during the crystal growth process.
Thursday 18th August 2011
The firm will present its III-V compound semiconductor based products at the solar power and environment fair in Hamburg, Germany from 5 to 9 September.
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Thursday 18th August 2011
The company will debut its latest NIR indium gallium arsenide spectrometers at SPIE’s Optics & Spectrometers conference.
Wednesday 17th August 2011
Strategy Analytics says that LED manufacturers are improving market penetration by increasing the functionality of their products and making them easier for consumers to use.
Wednesday 17th August 2011
The firm’s second generation gallium nitride based power transistor delivers high frequency switching with enhanced performance at 200 V and 100 milliohms.
Tuesday 16th August 2011
The company says increased trading transparency and more prominent access through the U.S. broker-dealer will enhance value for shareholders.
Tuesday 16th August 2011
Jim Brown has replaced Meyerhoff as President of the Utility Systems Business Group of the cadmium telluride solar cell manufacturer.
Monday 15th August 2011
The firm’s HELP4 LTE power amplifier, which uses indium gallium phosphide technology enables the LG Android smartphone.
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Monday 15th August 2011
IMS Research has lowered its 2011 gallium nitride MOCVD forecast by 24% to 833 reactors, which still represents 4% growth over 2011. In 2012, China is expected to continue to dominate the market for GaN MOCVD tools, market, but shrink to 61% in Q4’12 as Taiwan and Korea rebound.
Monday 15th August 2011
TFG Radiant Group of China and Ascent Solar intend to build the first non-U.S. and largest CIGS FAB using Ascent's technology.
Sunday 14th August 2011
The additions of Rob DeLine and Paul Apen should enhance the growth and industry advancement of MiaSolé’s strategic approach to growth in CIGS commercialisation.
Sunday 14th August 2011
The firm’s annual revenue has increased by 14% and annual net income was $147 million.
Saturday 13th August 2011
The producer of purified metals including gallium, germanium, indium, selenium and tellurium used in compound semiconductor wafers will use the new credit facility to refinance existing indebtedness, capital expenditures and growth opportunities.
Friday 12th August 2011
Gallium nitride epitaxial wafer production capacity in China will grow over 300% in just 2 years (2010-2012).

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