Peregrine Wins 2016 ECN Award
RF SOI (silicon on insulator) company Peregrine Semiconductor has announced that its UltraCMOS PE42723 high linearity RF switch has won an ECN IMPACT Award in the 'market disruptor' category.
In addition, the PE42723 switch was also named a finalist in the 'microwaves & RF' category, and the PE29100 GaN FET driver was recognised as a finalist in the 'power sources & conditioning devices' category.
The ECN IMPACT Awards recognise the products and services that have the greatest impact on the electronic components industry. The market disruptor category highlights a product that forever changed the electronic engineering industry or a particular vertical within the industry.
The PE42723 is an RF switch that reportedly has the highest linearity specifications on the market today. An upgraded version of the successful PE42722, this new RF switch offers enhanced performance in a smaller package. Like its predecessor, the PE42723 exceeds the linearity requirements of the DOCSIS 3.1 cable industry standard and enables adual upstream/downstream band architecture in the next generation cable customer premises equipment (CPE) devices.
The PE29100 is believed to be the world's fastest GaN FET driver. Built on Peregrine's UltraCMOS technology, the device is designed to drive the gates of a high-side and a low-side GaN FET in a switching configuration. It is said to deliver the industry's fastest switching speeds, shortest propagation delays and lowest rise and fall times to AC-DC converters, DC-DC converters, class D audio amplifiers and wireless-charging applications.
