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Friday 7th October 2011
The firm has strengthened its compound semiconductor materials business to cope with demand for high frequency devices which use gallium arsenide and gallium nitride epiwafers.
Friday 7th October 2011
The firm is looking to increase its market share in LED based technologies and light management systems.
Friday 7th October 2011
Designed for use in solar micro inverters, the silicon carbide based TO-252 D-Pak devices are now available in 2A, 5A, 8A & 10A ratings.
Thursday 6th October 2011
The solar cell manufacturer, which uses III-V semiconductors in some of its products, will aid development in energy and the environment.
Thursday 6th October 2011
The plasma enhanced atomic layer deposition system can be used in a variety of applications including compound semiconductor growth.
Thursday 6th October 2011
The semiconductor expert takes responsibility for worldwide opto component production.
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Thursday 6th October 2011
Deloitte Technology Israel Fast 50 has acknowledged the company which manufactures X-ray equipment used to characterise gallium arsenide, gallium nitride and indium phosphide wafers.
Thursday 6th October 2011
The low profile modules which feature a silicon carbide Schottky diode are designed for use in high frequency applications.
Wednesday 5th October 2011
Using a non-vacuum printed process, the firm says it has raised the bar for efficiency and cost savings.
Wednesday 5th October 2011
The indium gallium phosphide VCOs deliver low phase noise, a wide tuning range and low current consumption.
Tuesday 4th October 2011
The new engineering plant in Holland will support new research and development projects in spectroscopy.
Tuesday 4th October 2011
In addition to metalorganic CVD precursors, the new business will supply photoresists, related ancillaries for lithographic processing, and pads and slurries for CMP – all of which are used in the manufacture of LEDs.
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Tuesday 4th October 2011
The new entity extends RFMD's gallium nitride and arsenide expertise into high-growth non-RF markets.
Tuesday 4th October 2011
The three day 12th annual conference will bring hundreds to San Diego between October 24 and 26 and companies presenting will include Cree, Osram and Lumileds.
Tuesday 4th October 2011
Mitsubishi Electric is launching SiC power modules which should enable more compact, energy-efficient and quieter railcar systems.
Tuesday 4th October 2011
WIN is confident that VIPER RF will be able to give its customers a high level of design support and help them to achieve the best from using the WIN gallium arsenide process
Friday 30th September 2011
The new gallium arsenide power amplifier is designed for demanding testing environments making it ideal for automotive, military and aerospace BCI EMC testing.
Friday 30th September 2011
Osram OSTAR’s Compact 2x2 LED chip based on gallium nitride technology is setting new standards in brightness for the projection market.
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Friday 30th September 2011
The firm has merged the Consumer and Professional Lighting segments into a single entity; this should enable Osram to enter into product development with its customers at an earlier stage.
Friday 30th September 2011
The MBE reactor will be used for growing gallium nitride based optoelectronic materials.
Friday 30th September 2011
The firm has reached a milestone with this shipment of its advanced vertical thermal processing system to Cypress Semiconductor.
Friday 30th September 2011
The focus of the Manz display from October 5th to 7th, 2011, is on the latest developments in CIGS thin-film technology.
Friday 30th September 2011
The firm will publish its Q2 sales for 2011-2012 on 17th October 2011.
Friday 30th September 2011
The firm’s senior management will present at the conference on October 6th 2011 in New York City.

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