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Friday 22nd July 2011
austriamicrosystems AG today announced the completion of the transaction to acquire 100% of the shares in Texas Advanced Optoelectronic Solutions, Inc.
Thursday 21st July 2011
Osram Opto Semiconductors says its new infrared III-V CHIPLEDs are ideal for small and medium size touch displays.
Thursday 21st July 2011
The Asia Pacific region now accounts for more than 50 percent of the global semiconductor market, compared to less than 20 percent for the United States.
Thursday 21st July 2011
Twenty-four Cree XLamp MC-E LEDs are used in Magnalight’s light bar which is designed for boating and sailing applications.
Thursday 21st July 2011
The fledgling firm is focussed on identifying exceptionally talented entrepreneurs to significantly improve the world and help them realise their ambitions
Thursday 21st July 2011
The new 10X10 MSA compliant module is enabled by photonic integrated architecture and is claimed to slash costs and power by 50%.
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Thursday 21st July 2011
Export-Import Bank in Washington is providing a $16 million, 16.5-year loan to Azure Power Rajasthan Pvt to purchase thin-film solar cadmium telluride based First Solar modules for the construction of a 5 MW solar PV plant in Rajasthan.
Wednesday 20th July 2011
The gallium arsenide based solar cell pilot production plant will provide jobs for 256 people within five years in North Carolina.
Wednesday 20th July 2011
NIST researchers have found that dense arrays of extra-long carbon nanotubes absorb nearly all light of long wavelengths, and are promising coatings for prototype detectors intended to measure terahertz laser power.
Tuesday 19th July 2011
RFMD is offering foundry customers the gallium arsenide based processes which are suited to wireless applications.
Tuesday 19th July 2011
The firm’s latest amplifier is designed for 3G, 4G and LTE base stations.
Tuesday 19th July 2011
The MPAR system developed by both organisations has won an R&D 100 award and consolidates eight separate radar systems that currently perform four unique missions.
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Tuesday 19th July 2011
This means that AWR’s customers have timely access to Mitsubishi Electric’s nonlinear gallium arsenide and gallium nitride based RF models.
Tuesday 19th July 2011
The firm has filed infringement lawsuits against Osram to eight LED patents related to use in a wide range of products including lighting, automobiles, projectors, cell phone screens, and televisions.
Tuesday 19th July 2011
The manufacturer of defect inspection, process control metrology, and data analysis systems and software used by compound semiconductor device manufacturers is offering convertible senior notes due 2016.
Tuesday 19th July 2011
The company says its VARI*LITE VLX CBM-380 wash luminaires deliver performance, reliability and reduced maintenance.
Monday 18th July 2011
The Californian pioneer of semi-polar and non-polar light emitters drives green and blue laser performance to new levels
Friday 15th July 2011
Gallium nitride is overtaking silicon carbide for use in power semiconductors (which use PMICs), as it enhances power density, breakdown voltage, switching frequency, resistance and system efficiency.
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Friday 15th July 2011
The electronic industry award recognises best-in-class manufacturers from design collaboration to distribution. The firm’s products include next generation products based on gallium nitride technology.
Friday 15th July 2011
The state provides an ideal location for solar companies such as CdTe panel makers First Solar and WK Solar. Last week, Isofoton, the Spanish III-V high concentration PV manufacturer announced it has chosen Napoleon, Ohio, as the new home for its North American CPV manufacturing facility.
Friday 15th July 2011
The firm has been recognised for its silicon carbide products used in grid-connected solar and wind energy applications.
Friday 15th July 2011
University of Manchester scientist made a Fellow of the Royal Academy of Engineering for his work on MBE and compound semiconductors.
Friday 15th July 2011
With the Advanced Light Source (ALS), Berkeley Lab scientists have explored the electronic structure of graphene grown on a silicon carbide substrate, in regions never before tested by experiment.
Thursday 14th July 2011
Following the lead of Bridgelux, the Korean LED maker Samsung is developing a process to produce LEDs on 200 mm silicon.

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