The highly integrated chipsets, which employ the firm’s 0.15µm gallium arsenide technology, optimise each front end component for next-generation high-capacity 3G/4G radios using complex modulation schemes.
Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role. The firm will be showcasing its products and technologies at IMS 2011 between June 5 and 10
Jeffrey Sercel, Founder and CTO of JP Sercel Associates, Inc (JPSA) was selected as a New Hampshire High Technology Council (NHHTC) Entrepreneur of the Year for 2011. Sercel was recognized for the pioneering work of JPSA, which he started in 1994, which has grown into an internationally recognized supplier of laser systems.
Philips Lumileds and Future Electronics have announced the extension of their exclusive worldwide distribution relationship. The new five-year agreement builds on the decade long relationship that has enabled the development of solid-state lighting solutions worldwide.
RF Micro Devices, Inc., today announced that RFMD has surpassed two million units in cumulative shipments of its Multi-Chip Modules (MCMs) supporting 3G base station transceiver (BST) applications for the wireless infrastructure end market.
Cree, Inc. will demonstrate the industry’s first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers.