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Wednesday 8th June 2011
The firm’s AWC6323 indium gallium phosphide dual-band power amplifiers enable the Droid Charge, Samsung’s first 4G LTE smartphone.
Wednesday 8th June 2011
The high power, high gain devices include Toshiba’s gallium nitride amplifier for satcom applications to support VSAT.
Wednesday 8th June 2011
The highly integrated chipsets, which employ the firm’s 0.15µm gallium arsenide technology, optimise each front end component for next-generation high-capacity 3G/4G radios using complex modulation schemes.
Wednesday 8th June 2011
The 3MW system for the supermarket based in Belgium consists of over 17,000 copper indium gallium diselenide (CIGS) solar modules covering 34,000 square metres of roof space.
Wednesday 8th June 2011
With its new gallium nitride transistors, the firm is targeting L- and S-Band pulsed radar applications.
Tuesday 7th June 2011
The patent infringement litigation focuses on patents of Osram’s white and surface mountable LED technologies, typically used in display backlighting for TV sets and monitors.
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Tuesday 7th June 2011
The two firms will use their combined experience to expand the use of photovoltaics in façade construction and solar installation.
Tuesday 7th June 2011
The new LNA series debuting at IMS 2011 use Avago’s proprietary 0.25 µm gallium arsenide enhancement-mode pHEMT process to deliver low noise figures and high linearity.
Tuesday 7th June 2011
The LNAs based on its proprietary gallium arsenide pHEMT based process provide cost competitive solutions for wireless applications.
Tuesday 7th June 2011
The firm has reiterated strong guidance ahead of this week’s investor meetings with the outlook excluding the recently announced acquisitions of SiGe and Advanced Analogic Technologies.
Tuesday 7th June 2011
Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role. The firm will be showcasing its products and technologies at IMS 2011 between June 5 and 10
Monday 6th June 2011
Respected semiconductor executive and financier John Ocampo has joined the RFaxis Board of Advisors.
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Monday 6th June 2011
The firm has reached a milestone in shipments of its GaN-on-SiC commercial RF power transistors and high power MMIC amplifiers.
Monday 6th June 2011
The firm’s experts will be showing new ways to lower power consumption and prevent network system ESD, RF over-drive & DC over-voltage failures at IMS 2011.
Monday 6th June 2011
The firm’s latest gallium nitride creation enables consolidation of communications equipment into one compact module.
Monday 6th June 2011
NXP to offer both LDMOS and gallium nitride solutions for high-efficiency RF Power applications.
Monday 6th June 2011
The 14 new narrowband indium gallium phosphide VCOs cover the 7.2 - 15.1 GHz frequency range and target the growing point-to-point radio market.
Friday 3rd June 2011
The firm’s largest single order to date is from a Chinese based firm who is new to the LED industry.
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Friday 3rd June 2011
Jeffrey Sercel, Founder and CTO of JP Sercel Associates, Inc (JPSA) was selected as a New Hampshire High Technology Council (NHHTC) Entrepreneur of the Year for 2011. Sercel was recognized for the pioneering work of JPSA, which he started in 1994, which has grown into an internationally recognized supplier of laser systems.
Friday 3rd June 2011
With its new laser chips made for use in industrial, communications and defence applications, the firm is set to double its turnover to £5m within the next three years.
Friday 3rd June 2011
The firm will be showcasing its GaN transistors and MMICs which it says deliver industry leading power and efficiency for applications at 2011 IEEE IMS.
Thursday 2nd June 2011
Philips Lumileds and Future Electronics have announced the extension of their exclusive worldwide distribution relationship. The new five-year agreement builds on the decade long relationship that has enabled the development of solid-state lighting solutions worldwide.
Thursday 2nd June 2011
RF Micro Devices, Inc., today announced that RFMD has surpassed two million units in cumulative shipments of its Multi-Chip Modules (MCMs) supporting 3G base station transceiver (BST) applications for the wireless infrastructure end market.
Thursday 2nd June 2011
Cree, Inc. will demonstrate the industry’s first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers.

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