CoorsTek Unveils GaN-on-Silicon wafers at ISPSD 2016
CoorsTek, a supplier of engineered ceramics, will unveil its enhanced GaN-on-silicon epiwafers at next week's International Symposium on Power Semiconductor Devices and ICs (ISPSD) in Prague, Czech Republic.
CoorsTek will be displaying the combined capabilities of CoorsTek and Covalent Materials (formerly Toshiba Ceramics, now CoorsTek KK) including: GaN-on-Si Epiwafers for power devices and integrated circuits; AlN substrates for hybrid circuits; and engineered ceramic components for semiconductor processing equipment made from PureSiC CVD SiC, PlasmaPure High-Purity alumina, and other technical ceramics.
"The latest CoorsTek GaN-on-silicon technology helps customers achieve higher device manufacturing yields and breakdown voltages based on lower defect densities and leakage current," explains Jun Komiyama, R&D manager at CoorsTek. "The shift from 150mm to 200mm diameter GaN-on-Si process is also improving the economics for power electronics in electric and hybrid automobiles, solar photovoltaic inverters, RF and microwave power, and more."
On June 1, CoorsTek announced its acquisition of the Philips ceramic operation in Uden, Netherlands - extending its footprint to a dozen European manufacturing locations in the Czech Republic, England, Finland, Germany, Italy, Netherlands, Norway, Scotland, and Sweden.
