Nitride Solutions is developing a manufacturing technology that hopes to deliver high-volume, low-cost aluminium nitride substrates with defect rates 10 times lower than substrates currently on the market.
The organisations will jointly develop technology for next-generation gallium nitride power semiconductors and LEDs on 200 mm diameter silicon substrates. They aim to enhance properties and reduced production costs.
The company is expanding total capacity by 5,000 tonnes per year in Japan, Taiwan and China to cope with demand for ammonia gas, which is used in many electronic applications including gallium nitride LEDs.
The provider of next generation telecommunications network solutions has said that the level of cooperation and support demonstrated by Anadigics during a critical period in its manufacturing process was significant in ensuring success in the wireless handset market.
Scientists will measure the performance, reliability and thermal stability of different types of solar cells, including CIGS and use electroluminescence, photoluminescence and thermography in characterisation.
At this year’s meeting, the firm saluted its gallium arsenide POET technology, which is focused on increasing the speed and decreasing the energy usage in the general purpose server, desktop and laptop microprocessor markets for consumer applications.
The manufacturing facility for gallium arsenide based multi-junction photovoltaic systems is being financed by a combination of $5 million in Recovery Act tax credits and $12 million in private funding.
The new high-efficiency PA modules based on gallium indium phosphide / gallium arsenide HBT technology are ideal for embedded WLAN applications requiring small size, high efficiency and low battery-voltage operation.
The firm’s new low noise amplifiers provide flexible, highly-efficient linear solutions for mobile network base stations, repeaters, point-to-point radios, test and other high-performance applications.
The new TMGa production plant, to be completed in 2012, will be three times the size of the existing unit. The second facility for TMIn manufacture will increase capacity by 400 % and should be completed by Dec 2011.